Abstract
SiO 2 nanocrystals embedded in Lu 2 O 3 thin film were fabricated using pulsed-laser deposition method. Two dimensional finite element calculations clearly reveal that SiO 2 nanocrystals certainly experienced great compressive stress in Lu 2 O 3 thin film. This may lead to a great deal of stress-induced defects at the interface of SiO 2 nanocrystals embedded in Lu 2 O 3 thin film and thus induced the observed photoluminescence peak and charge storage properties. The findings presented here indicate that the matrix environment of the nanocrystals plays a significant role in determining their electrical and optical properties.
Original language | English |
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Pages (from-to) | 3138-3141 |
Number of pages | 4 |
Journal | Applied Surface Science |
Volume | 256 |
Issue number | 10 |
DOIs | |
Publication status | Published - 1 Mar 2010 |