Photoluminescence and charge storage characteristics of silica nanocrystals: The role of stress-induced interface defects

C. L. Yuan*, W. Lei

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    SiO 2 nanocrystals embedded in Lu 2 O 3 thin film were fabricated using pulsed-laser deposition method. Two dimensional finite element calculations clearly reveal that SiO 2 nanocrystals certainly experienced great compressive stress in Lu 2 O 3 thin film. This may lead to a great deal of stress-induced defects at the interface of SiO 2 nanocrystals embedded in Lu 2 O 3 thin film and thus induced the observed photoluminescence peak and charge storage properties. The findings presented here indicate that the matrix environment of the nanocrystals plays a significant role in determining their electrical and optical properties.

    Original languageEnglish
    Pages (from-to)3138-3141
    Number of pages4
    JournalApplied Surface Science
    Volume256
    Issue number10
    DOIs
    Publication statusPublished - 1 Mar 2010

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