Photoluminescence and charge storage characteristics of silica nanocrystals: The role of stress-induced interface defects

C. L. Yuan; W. Lei

doi:10.1016/j.apsusc.2009.11.087

Photoluminescence and charge storage characteristics of silica nanocrystals: The role of stress-induced interface defects

C. L. Yuan^*
, W. Lei

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

SiO ₂ nanocrystals embedded in Lu ₂ O ₃ thin film were fabricated using pulsed-laser deposition method. Two dimensional finite element calculations clearly reveal that SiO ₂ nanocrystals certainly experienced great compressive stress in Lu ₂ O ₃ thin film. This may lead to a great deal of stress-induced defects at the interface of SiO ₂ nanocrystals embedded in Lu ₂ O ₃ thin film and thus induced the observed photoluminescence peak and charge storage properties. The findings presented here indicate that the matrix environment of the nanocrystals plays a significant role in determining their electrical and optical properties.

Original language	English
Pages (from-to)	3138-3141
Number of pages	4
Journal	Applied Surface Science
Volume	256
Issue number	10
DOIs	https://doi.org/10.1016/j.apsusc.2009.11.087
Publication status	Published - 1 Mar 2010

Access to Document

10.1016/j.apsusc.2009.11.087

Cite this

@article{85484b24bd2f455d84d865044846c15b,

title = "Photoluminescence and charge storage characteristics of silica nanocrystals: The role of stress-induced interface defects",

abstract = " SiO 2 nanocrystals embedded in Lu 2 O 3 thin film were fabricated using pulsed-laser deposition method. Two dimensional finite element calculations clearly reveal that SiO 2 nanocrystals certainly experienced great compressive stress in Lu 2 O 3 thin film. This may lead to a great deal of stress-induced defects at the interface of SiO 2 nanocrystals embedded in Lu 2 O 3 thin film and thus induced the observed photoluminescence peak and charge storage properties. The findings presented here indicate that the matrix environment of the nanocrystals plays a significant role in determining their electrical and optical properties.",

keywords = "Metal-insulator-semiconductor devices, Nanocrystals, Photoluminescence, Stress",

author = "Yuan, \{C. L.\} and W. Lei",

year = "2010",

month = mar,

day = "1",

doi = "10.1016/j.apsusc.2009.11.087",

language = "English",

volume = "256",

pages = "3138--3141",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "10",

}

TY - JOUR

T1 - Photoluminescence and charge storage characteristics of silica nanocrystals

T2 - The role of stress-induced interface defects

AU - Yuan, C. L.

AU - Lei, W.

PY - 2010/3/1

Y1 - 2010/3/1

N2 - SiO 2 nanocrystals embedded in Lu 2 O 3 thin film were fabricated using pulsed-laser deposition method. Two dimensional finite element calculations clearly reveal that SiO 2 nanocrystals certainly experienced great compressive stress in Lu 2 O 3 thin film. This may lead to a great deal of stress-induced defects at the interface of SiO 2 nanocrystals embedded in Lu 2 O 3 thin film and thus induced the observed photoluminescence peak and charge storage properties. The findings presented here indicate that the matrix environment of the nanocrystals plays a significant role in determining their electrical and optical properties.

AB - SiO 2 nanocrystals embedded in Lu 2 O 3 thin film were fabricated using pulsed-laser deposition method. Two dimensional finite element calculations clearly reveal that SiO 2 nanocrystals certainly experienced great compressive stress in Lu 2 O 3 thin film. This may lead to a great deal of stress-induced defects at the interface of SiO 2 nanocrystals embedded in Lu 2 O 3 thin film and thus induced the observed photoluminescence peak and charge storage properties. The findings presented here indicate that the matrix environment of the nanocrystals plays a significant role in determining their electrical and optical properties.

KW - Metal-insulator-semiconductor devices

KW - Nanocrystals

KW - Photoluminescence

KW - Stress

UR - https://www.scopus.com/pages/publications/77349083911

U2 - 10.1016/j.apsusc.2009.11.087

DO - 10.1016/j.apsusc.2009.11.087

M3 - Article

SN - 0169-4332

VL - 256

SP - 3138

EP - 3141

JO - Applied Surface Science

JF - Applied Surface Science

IS - 10

ER -

Photoluminescence and charge storage characteristics of silica nanocrystals: The role of stress-induced interface defects

Abstract

Access to Document

Other files and links

Fingerprint

Cite this