Photoluminescence and triboluminescence of PZT materials at room temperature

Yun Liu; Chao Nan Xu; Kazuhiro Nonaka; Hiroshi Tateyama

doi:10.1080/00150190108008590

Photoluminescence and triboluminescence of PZT materials at room temperature

Yun Liu^*, Chao Nan Xu, Kazuhiro Nonaka, Hiroshi Tateyama

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

17 Citations (Scopus)

Abstract

Photoluminescent and triboluminescent (TrL) properties of PZT materials at room temperature were investigated for the first time in this study. Two emissions centered at 2.0eV and 3.0eV were observed, respectively, which were explained by the self-trapped behavior of the intrinsic defects. Moreover, the strong TrL was observed in the PZT film, which was associated with the oxygen vacancies since the TrL intensity of the PZT film was greatly increased after heat-treatment in a reducing atmosphere. These results make it possible for the PZT material to act as light-emission devices and optical stress sensors.

Original language	English
Pages (from-to)	331-336
Number of pages	6
Journal	Ferroelectrics
Volume	264
Issue number	1
DOIs	https://doi.org/10.1080/00150190108008590
Publication status	Published - 2001
Externally published	Yes
Event	3rd Asian Meeting on Ferroelectrics, AMF-3 - Hong Kong, China Duration: 12 Dec 2000 → 15 Dec 2000

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10.1080/00150190108008590

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title = "Photoluminescence and triboluminescence of PZT materials at room temperature",

abstract = "Photoluminescent and triboluminescent (TrL) properties of PZT materials at room temperature were investigated for the first time in this study. Two emissions centered at 2.0eV and 3.0eV were observed, respectively, which were explained by the self-trapped behavior of the intrinsic defects. Moreover, the strong TrL was observed in the PZT film, which was associated with the oxygen vacancies since the TrL intensity of the PZT film was greatly increased after heat-treatment in a reducing atmosphere. These results make it possible for the PZT material to act as light-emission devices and optical stress sensors.",

keywords = "PZT, photoluminescence, triboluminescence",

author = "Yun Liu and Xu, {Chao Nan} and Kazuhiro Nonaka and Hiroshi Tateyama",

year = "2001",

doi = "10.1080/00150190108008590",

language = "English",

volume = "264",

pages = "331--336",

journal = "Ferroelectrics",

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note = "3rd Asian Meeting on Ferroelectrics, AMF-3 ; Conference date: 12-12-2000 Through 15-12-2000",

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T1 - Photoluminescence and triboluminescence of PZT materials at room temperature

AU - Liu, Yun

AU - Xu, Chao Nan

AU - Nonaka, Kazuhiro

AU - Tateyama, Hiroshi

PY - 2001

Y1 - 2001

N2 - Photoluminescent and triboluminescent (TrL) properties of PZT materials at room temperature were investigated for the first time in this study. Two emissions centered at 2.0eV and 3.0eV were observed, respectively, which were explained by the self-trapped behavior of the intrinsic defects. Moreover, the strong TrL was observed in the PZT film, which was associated with the oxygen vacancies since the TrL intensity of the PZT film was greatly increased after heat-treatment in a reducing atmosphere. These results make it possible for the PZT material to act as light-emission devices and optical stress sensors.

AB - Photoluminescent and triboluminescent (TrL) properties of PZT materials at room temperature were investigated for the first time in this study. Two emissions centered at 2.0eV and 3.0eV were observed, respectively, which were explained by the self-trapped behavior of the intrinsic defects. Moreover, the strong TrL was observed in the PZT film, which was associated with the oxygen vacancies since the TrL intensity of the PZT film was greatly increased after heat-treatment in a reducing atmosphere. These results make it possible for the PZT material to act as light-emission devices and optical stress sensors.

KW - PZT

KW - photoluminescence

KW - triboluminescence

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U2 - 10.1080/00150190108008590

DO - 10.1080/00150190108008590

M3 - Conference article

SN - 0015-0193

VL - 264

SP - 331

EP - 336

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

T2 - 3rd Asian Meeting on Ferroelectrics, AMF-3

Y2 - 12 December 2000 through 15 December 2000

ER -

Photoluminescence and triboluminescence of PZT materials at room temperature

Abstract

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