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Photoluminescence band of Hf origin in hafnium-implanted silicon in the energy range 700 meV to 950 meV

R. Sachdeva*, A. A. Istratov, P. N.K. Deenapanray, E. R. Weber

*Corresponding author for this work

    Research output: Contribution to journal › Article › peer-review

    7 Citations (Scopus)

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