Photoluminescence imaging of silicon bricks

Bernhard Mitchell*, Jürgen W. Weber, Mattias Juhl, Daniel Macdonald, Thorsten Trupke

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    10 Citations (Scopus)


    Photoluminescence imaging techniques have recently been extended to silicon bricks for early production quality control and electronic characterisation in photovoltaics and microelectronics. This contribution reviews the state of the art of this new method which is fundamentally based on spectral luminescence analyses. We present highly resolved bulk lifetime images that can be rapidly extracted from the side faces of directionally solidified or Czochralski grown silicon bricks. It is discussed how detailed physical modelling and experimental verification give good confidence of the best practice measurement errors. It is also demonstrated that bulk lifetime imaging can further be used for doping and interstitial iron concentration imaging. Additionally, we show that full spectrum measurements allow verification of the luminescence modelling and are, when fitted to the theory, another accurate method of extracting the absolute bulk lifetime.

    Original languageEnglish
    Title of host publicationGettering and Defect Engineering in Semiconductor Technology XV
    PublisherTrans Tech Publications Ltd.
    Number of pages10
    ISBN (Print)9783037858240
    Publication statusPublished - 2014
    Event15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013 - Oxford, United Kingdom
    Duration: 22 Sept 201327 Sept 2013

    Publication series

    NameSolid State Phenomena
    ISSN (Print)1012-0394


    Conference15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013
    Country/TerritoryUnited Kingdom


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