Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Kunlun Yan; Rongping Wang; Khu Vu; Steve Madden; Kidane Belay; Robert Elliman; Barry Luther-Davies

doi:10.1364/OME.2.001270

Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Kunlun Yan^*, Rongping Wang, Khu Vu, Steve Madden, Kidane Belay, Robert Elliman, Barry Luther-Davies

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We report the properties of thermally evaporated Ge_11.5As₂₄Se_64.5 chalcogenide films ion implanted at energies of 2.25MeV with Erbium at concentrations up to 0.4 mol%. The effect of post implant annealing on the refractive index of the films and on the ⁴I₁₃/2→ ⁴I₁₅/2 Er transition was studied. Photoluminescence was found to increase significantly and a lifetime of 1.35 ms was obtained in films annealed at 180^oC. Different apparent lifetimes for the ⁴I₁₃/2→ ⁴I₁₅/2 transition were obtained for 980nm and 1470nm pumps and the origins of this phenomenon are discussed.

Original language	English
Pages (from-to)	1270-1277
Number of pages	8
Journal	Optical Materials Express
Volume	2
Issue number	9
DOIs	https://doi.org/10.1364/OME.2.001270
Publication status	Published - Sept 2012

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title = "Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films",

abstract = "We report the properties of thermally evaporated Ge11.5As24Se64.5 chalcogenide films ion implanted at energies of 2.25MeV with Erbium at concentrations up to 0.4 mol%. The effect of post implant annealing on the refractive index of the films and on the 4I13/2→ 4I15/2 Er transition was studied. Photoluminescence was found to increase significantly and a lifetime of 1.35 ms was obtained in films annealed at 180oC. Different apparent lifetimes for the 4I13/2→ 4I15/2 transition were obtained for 980nm and 1470nm pumps and the origins of this phenomenon are discussed.",

author = "Kunlun Yan and Rongping Wang and Khu Vu and Steve Madden and Kidane Belay and Robert Elliman and Barry Luther-Davies",

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T1 - Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

AU - Yan, Kunlun

AU - Wang, Rongping

AU - Vu, Khu

AU - Madden, Steve

AU - Belay, Kidane

AU - Elliman, Robert

AU - Luther-Davies, Barry

PY - 2012/9

Y1 - 2012/9

N2 - We report the properties of thermally evaporated Ge11.5As24Se64.5 chalcogenide films ion implanted at energies of 2.25MeV with Erbium at concentrations up to 0.4 mol%. The effect of post implant annealing on the refractive index of the films and on the 4I13/2→ 4I15/2 Er transition was studied. Photoluminescence was found to increase significantly and a lifetime of 1.35 ms was obtained in films annealed at 180oC. Different apparent lifetimes for the 4I13/2→ 4I15/2 transition were obtained for 980nm and 1470nm pumps and the origins of this phenomenon are discussed.

AB - We report the properties of thermally evaporated Ge11.5As24Se64.5 chalcogenide films ion implanted at energies of 2.25MeV with Erbium at concentrations up to 0.4 mol%. The effect of post implant annealing on the refractive index of the films and on the 4I13/2→ 4I15/2 Er transition was studied. Photoluminescence was found to increase significantly and a lifetime of 1.35 ms was obtained in films annealed at 180oC. Different apparent lifetimes for the 4I13/2→ 4I15/2 transition were obtained for 980nm and 1470nm pumps and the origins of this phenomenon are discussed.

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DO - 10.1364/OME.2.001270

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VL - 2

SP - 1270

EP - 1277

JO - Optical Materials Express

JF - Optical Materials Express

IS - 9

ER -

Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

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