Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Kunlun Yan*, Rongping Wang, Khu Vu, Steve Madden, Kidane Belay, Robert Elliman, Barry Luther-Davies

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    16 Citations (Scopus)


    We report the properties of thermally evaporated Ge11.5As24Se64.5 chalcogenide films ion implanted at energies of 2.25MeV with Erbium at concentrations up to 0.4 mol%. The effect of post implant annealing on the refractive index of the films and on the 4I13/2→ 4I15/2 Er transition was studied. Photoluminescence was found to increase significantly and a lifetime of 1.35 ms was obtained in films annealed at 180oC. Different apparent lifetimes for the 4I13/2→ 4I15/2 transition were obtained for 980nm and 1470nm pumps and the origins of this phenomenon are discussed.

    Original languageEnglish
    Pages (from-to)1270-1277
    Number of pages8
    JournalOptical Materials Express
    Issue number9
    Publication statusPublished - Sept 2012


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