Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Kunlun Yan*, Rongping Wang, Khu Vu, Robert Elliman, Kidane Belay, Barry Luther-Davies

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    We report ion-implanted Er ions into Ge 11.5As 24Se 64.5 thin films with different doses, and subsequently thermal-annealed the films with different times. The characterization results indicated that the thickness, refractive index and optical bandgap of the films can be stabilized with 3 hour thermal annealing. The 1.5 μm emission arising from the 4I 13/24I 15/2 transition was observed and a lifetime of 1.35 ms was obtained in films annealed at 180°C.

    Original languageEnglish
    Title of host publication2011 Int. Quantum Electr. Conf., IQEC 2011 Conf Lasers Electro-Optics, CLEO Pacific Rim 2011 Incorporating Australasian Conf. on Optics, Lasers Spectrosc. Australian Conf. Optical Fibre Technol.- Conf
    Pages1612-1616
    Number of pages5
    DOIs
    Publication statusPublished - 2011
    Event2011 International Quantum Electronics Conference, IQEC 2011 and Conference on Lasers and Electro-Optics, CLEO Pacific Rim 2011 - Sydney, NSW, Australia
    Duration: 28 Aug 20111 Sept 2011

    Publication series

    Name2011 Int. Quantum Electron. Conf., IQEC 2011 and Conf. Lasers and Electro-Optics, CLEO Pacific Rim 2011 Incorporating the Australasian Conf. Optics, Lasers and Spectroscopy and the Australian Conf.

    Conference

    Conference2011 International Quantum Electronics Conference, IQEC 2011 and Conference on Lasers and Electro-Optics, CLEO Pacific Rim 2011
    Country/TerritoryAustralia
    CitySydney, NSW
    Period28/08/111/09/11

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