TY - GEN
T1 - Photoluminescence in er-doped Ge-As-Se chalcogenide thin films
AU - Yan, Kunlun
AU - Wang, Rongping
AU - Vu, Khu
AU - Elliman, Robert
AU - Belay, Kidane
AU - Luther-Davies, Barry
PY - 2011
Y1 - 2011
N2 - We report ion-implanted Er ions into Ge11.5As24Se64.5 thin films with different doses, and subsequently thermal-annealed the films with di fferent times. The characterization results indicated that the thickness, refractive index and optical bandgap o f the films can be stabilized with 3 hour thermal annealing. The 1.5 μm emission arising from the 4I13/2→4I15/2 transition was observed and a lifetime of 1.35 ms was obtained in films annealed at 180°C.
AB - We report ion-implanted Er ions into Ge11.5As24Se64.5 thin films with different doses, and subsequently thermal-annealed the films with di fferent times. The characterization results indicated that the thickness, refractive index and optical bandgap o f the films can be stabilized with 3 hour thermal annealing. The 1.5 μm emission arising from the 4I13/2→4I15/2 transition was observed and a lifetime of 1.35 ms was obtained in films annealed at 180°C.
UR - http://www.scopus.com/inward/record.url?scp=84893704675&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84893704675
SN - 9780977565771
T3 - Optics InfoBase Conference Papers
SP - 1612
EP - 1616
BT - Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
T2 - Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
Y2 - 28 August 2011 through 1 September 2011
ER -