Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers

Zongyou Yin; Xiaohong Tang; Jixuan Zhang; Jinghua Zhao; Sentosa Deny; Hao Gong

doi:10.1007/s11051-008-9551-4

Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers

Zongyou Yin, Xiaohong Tang^*, Jixuan Zhang, Jinghua Zhao, Sentosa Deny, Hao Gong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The effects of the top barrier and the dot density on photoluminescence (PL) of the InAs quantum dots (QDs) sandwiched by the graded In _xGa_1-xAs barriers grown by metal-organic vapor phase epitaxy (MOVPE) have been studied. Two emission peaks corresponding to the ground state and the 1st excited state transitions of the QD structures have been observed, which matches well to the theoretical calculation. The PL emission linewidth and intensity of the InAs QDs structure are improved by reducing the Indium/Gallium composition variation of the graded In _xGa_1-xAs top barrier layer of the structure. The QDs' ground states filling excitation power depends on the crystal quality of the InGaAs barrier layer and the QD density. The extracted thermal activation energy for the QDs' PL emission is sensitive to the QD size.

Original language	English
Pages (from-to)	1947-1955
Number of pages	9
Journal	Journal of Nanoparticle Research
Volume	11
Issue number	8
DOIs	https://doi.org/10.1007/s11051-008-9551-4
Publication status	Published - Nov 2009
Externally published	Yes

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title = "Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers",

abstract = "The effects of the top barrier and the dot density on photoluminescence (PL) of the InAs quantum dots (QDs) sandwiched by the graded In xGa1-xAs barriers grown by metal-organic vapor phase epitaxy (MOVPE) have been studied. Two emission peaks corresponding to the ground state and the 1st excited state transitions of the QD structures have been observed, which matches well to the theoretical calculation. The PL emission linewidth and intensity of the InAs QDs structure are improved by reducing the Indium/Gallium composition variation of the graded In xGa1-xAs top barrier layer of the structure. The QDs' ground states filling excitation power depends on the crystal quality of the InGaAs barrier layer and the QD density. The extracted thermal activation energy for the QDs' PL emission is sensitive to the QD size.",

keywords = "Crystal quality, Graded barrier, Nanocomposites, Photoluminescence, Quantum dots, State filling",

author = "Zongyou Yin and Xiaohong Tang and Jixuan Zhang and Jinghua Zhao and Sentosa Deny and Hao Gong",

year = "2009",

month = nov,

doi = "10.1007/s11051-008-9551-4",

language = "English",

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journal = "Journal of Nanoparticle Research",

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publisher = "Springer Netherlands",

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TY - JOUR

T1 - Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers

AU - Yin, Zongyou

AU - Tang, Xiaohong

AU - Zhang, Jixuan

AU - Zhao, Jinghua

AU - Deny, Sentosa

AU - Gong, Hao

PY - 2009/11

Y1 - 2009/11

N2 - The effects of the top barrier and the dot density on photoluminescence (PL) of the InAs quantum dots (QDs) sandwiched by the graded In xGa1-xAs barriers grown by metal-organic vapor phase epitaxy (MOVPE) have been studied. Two emission peaks corresponding to the ground state and the 1st excited state transitions of the QD structures have been observed, which matches well to the theoretical calculation. The PL emission linewidth and intensity of the InAs QDs structure are improved by reducing the Indium/Gallium composition variation of the graded In xGa1-xAs top barrier layer of the structure. The QDs' ground states filling excitation power depends on the crystal quality of the InGaAs barrier layer and the QD density. The extracted thermal activation energy for the QDs' PL emission is sensitive to the QD size.

AB - The effects of the top barrier and the dot density on photoluminescence (PL) of the InAs quantum dots (QDs) sandwiched by the graded In xGa1-xAs barriers grown by metal-organic vapor phase epitaxy (MOVPE) have been studied. Two emission peaks corresponding to the ground state and the 1st excited state transitions of the QD structures have been observed, which matches well to the theoretical calculation. The PL emission linewidth and intensity of the InAs QDs structure are improved by reducing the Indium/Gallium composition variation of the graded In xGa1-xAs top barrier layer of the structure. The QDs' ground states filling excitation power depends on the crystal quality of the InGaAs barrier layer and the QD density. The extracted thermal activation energy for the QDs' PL emission is sensitive to the QD size.

KW - Crystal quality

KW - Graded barrier

KW - Nanocomposites

KW - Photoluminescence

KW - Quantum dots

KW - State filling

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U2 - 10.1007/s11051-008-9551-4

DO - 10.1007/s11051-008-9551-4

M3 - Article

SN - 1388-0764

VL - 11

SP - 1947

EP - 1955

JO - Journal of Nanoparticle Research

JF - Journal of Nanoparticle Research

IS - 8

ER -

Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers

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