Photoluminescence properties of Er doped AS2S3 films deposited using RF co-sputtering and the impact of rapid thermal annealing

Huma Latif*, Kunlun Yan, Steve Madden

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    This work reports the photoluminescence (PL) properties of Er doped AS2S3 films (at 0.1 mol% concentration) fabricated by RF co-sputtering. As sputtered films are shown to exhibit PL degradation only on exposure to the combination of green light and water vapour due to photo-incorporation of OH groups through film nanostructural pores. Rapid Thermal Annealing is investigated as a possible remedy to this issue.

    Original languageEnglish
    Title of host publicationAOS Australian Conference on Optical Fibre Technology, ACOFT 2019 and Australian Conference on Optics, Lasers, and Spectroscopy, ACOLS 2019
    EditorsArnan Mitchell, Halina Rubinsztein-Dunlop
    PublisherSPIE
    ISBN (Electronic)9781510631403
    DOIs
    Publication statusPublished - 2019
    EventAOS Australian Conference on Optical Fibre Technology, ACOFT 2019 and Australian Conference on Optics, Lasers, and Spectroscopy, ACOLS 2019 - Melbourne, Australia
    Duration: 9 Dec 201912 Dec 2019

    Publication series

    NameProceedings of SPIE - The International Society for Optical Engineering
    Volume11200
    ISSN (Print)0277-786X
    ISSN (Electronic)1996-756X

    Conference

    ConferenceAOS Australian Conference on Optical Fibre Technology, ACOFT 2019 and Australian Conference on Optics, Lasers, and Spectroscopy, ACOLS 2019
    Country/TerritoryAustralia
    CityMelbourne
    Period9/12/1912/12/19

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