Picosecond carrier lifetime measurements on a single GaAs nanowire

P. Parkinson*, H. Wang, Q. Gao, H. H. Tan, C. Jagadish

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    The photocarrier lifetime within semiconductor nanowires is a critical parameter for optoelectronic applications. Here, we present a technique to determine the lifetime with picosecond resolution, revealing a 7.5 ps lifetime for GaAs nanowires.

    Original languageEnglish
    Title of host publication2012 Conference on Lasers and Electro-Optics, CLEO 2012
    Publication statusPublished - 2012
    Event2012 Conference on Lasers and Electro-Optics, CLEO 2012 - San Jose, CA, United States
    Duration: 6 May 201211 May 2012

    Publication series

    Name2012 Conference on Lasers and Electro-Optics, CLEO 2012

    Conference

    Conference2012 Conference on Lasers and Electro-Optics, CLEO 2012
    Country/TerritoryUnited States
    CitySan Jose, CA
    Period6/05/1211/05/12

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