Picosecond high-repetition-rate pulsed laser ablation of dielectrics: The effect of energy accumulation between pulses

Barry Luther-Davies*, Andrei V. Rode, Nathan R. Madsen, Eugene G. Gamaly

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    35 Citations (Scopus)

    Abstract

    We report experiments on the ablation of arsenic trisulphide and silicon using high-repetition-rate (megahertz) trains of picosecond pulses. In the case of arsenic trisulphide, the average single pulse fluence at ablation threshold is found to be >100 times lower when pulses are delivered as a 76-MHz train compared with the case of a solitary pulse. For silicon, however, the threshold for a 4.1-MHz train equals the value for a solitary pulse. A model of irradiation by high-repetition-rate pulse trains demonstrates that for arsenic trisulphide energy accumulates in the target surface from several hundred successive pulses, lowering the ablation threshold and causing a change from the laser-solid to laser-plasma mode as the surface temperature increases.

    Original languageEnglish
    Pages (from-to)1-8
    Number of pages8
    JournalOptical Engineering
    Volume44
    Issue number5
    DOIs
    Publication statusPublished - May 2005

    Fingerprint

    Dive into the research topics of 'Picosecond high-repetition-rate pulsed laser ablation of dielectrics: The effect of energy accumulation between pulses'. Together they form a unique fingerprint.

    Cite this