Plasma hydrogenated, reactively sputtered aluminium oxide for silicon surface passivation

Xinyu Zhang*, Andres Cuevas

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    13 Citations (Scopus)

    Abstract

    The intentional addition of hydrogen during reactive sputtering of AlOx films has led to a dramatic improvement of the surface passivation of crystalline silicon wafers achieved with this technique. The 5 ms effective minority carrier lifetime measured on 1.5 Ω cm n-type CZ silicon wafers is close to the 6 ms of a control wafer coated by atomic layer deposition (ALD) of AlOx. Hydrogen-sputtered films also provide excellent passivation of 1 Ω cm p-type silicon, as demonstrated by an effective lifetime of 1.1 ms. It is likely that the improved passivation is related to the formation of an interfacial silicon oxide layer, as indicated by FTIR measurements.

    Original languageEnglish
    Pages (from-to)619-622
    Number of pages4
    JournalPhysica Status Solidi - Rapid Research Letters
    Volume7
    Issue number9
    DOIs
    Publication statusPublished - Sept 2013

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