Plasmonic cavities for increasing the radiative efficiency of GaAs nano wires

S. Mokkapati, D. Saxena, Nian Jiang, H. H. Tan, C. Jagadish

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    3 Citations (Scopus)

    Abstract

    We report a post-growth approach to increase the radiative recombination efficiency of GaAs nanowires, beyond what has been achieved using surface passivation. This is done by coupling the nanowires to resonant plasmonic nanocavities to reduce the radiative recombination lifetime of minority carriers, thereby increasing the radiative efficiency by an order of magnitude.

    Original languageEnglish
    Title of host publication2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
    EditorsMariusz Martyniuk, Lorenzo Faraone
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages244-245
    Number of pages2
    ISBN (Electronic)9781479968671
    DOIs
    Publication statusPublished - 10 Feb 2014
    Event2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia
    Duration: 14 Dec 201417 Dec 2014

    Publication series

    Name2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

    Conference

    Conference2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
    Country/TerritoryAustralia
    CityPerth
    Period14/12/1417/12/14

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