Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells

L. Fu; H. F. Lu; S. Mokkapati; G. Jolley; H. H. Tan; C. Jagadish

doi:10.1109/PHO.2011.6110590

Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells

L. Fu^*, H. F. Lu, S. Mokkapati, G. Jolley, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate that plasmonic light trapping effect can be used to improve all the main device characteristics of self-assembled InGaAs/GaAs quantum dot solar cell. The underlying physical processes of carrier occupation, transportation, and recombination within the plasmonic quantum dot solar cells will be discussed.

Original language	English
Title of host publication	IEEE Photonic Society 24th Annual Meeting, PHO 2011
Pages	387-388
Number of pages	2
DOIs	https://doi.org/10.1109/PHO.2011.6110590
Publication status	Published - 2011
Event	24th Annual Meeting on IEEE Photonic Society, PHO 2011 - Arlington, VA, United States Duration: 9 Oct 2011 → 13 Oct 2011

Publication series

Name	IEEE Photonic Society 24th Annual Meeting, PHO 2011

Conference

Conference	24th Annual Meeting on IEEE Photonic Society, PHO 2011
Country/Territory	United States
City	Arlington, VA
Period	9/10/11 → 13/10/11

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10.1109/PHO.2011.6110590

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title = "Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells",

abstract = "We demonstrate that plasmonic light trapping effect can be used to improve all the main device characteristics of self-assembled InGaAs/GaAs quantum dot solar cell. The underlying physical processes of carrier occupation, transportation, and recombination within the plasmonic quantum dot solar cells will be discussed.",

author = "L. Fu and Lu, {H. F.} and S. Mokkapati and G. Jolley and Tan, {H. H.} and C. Jagadish",

year = "2011",

doi = "10.1109/PHO.2011.6110590",

language = "English",

isbn = "9781424489404",

series = "IEEE Photonic Society 24th Annual Meeting, PHO 2011",

pages = "387--388",

booktitle = "IEEE Photonic Society 24th Annual Meeting, PHO 2011",

note = "24th Annual Meeting on IEEE Photonic Society, PHO 2011 ; Conference date: 09-10-2011 Through 13-10-2011",

}

Fu, L, Lu, HF, Mokkapati, S, Jolley, G, Tan, HH & Jagadish, C 2011, Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells. in IEEE Photonic Society 24th Annual Meeting, PHO 2011., 6110590, IEEE Photonic Society 24th Annual Meeting, PHO 2011, pp. 387-388, 24th Annual Meeting on IEEE Photonic Society, PHO 2011, Arlington, VA, United States, 9/10/11. https://doi.org/10.1109/PHO.2011.6110590

TY - GEN

T1 - Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells

AU - Fu, L.

AU - Lu, H. F.

AU - Mokkapati, S.

AU - Jolley, G.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2011

Y1 - 2011

N2 - We demonstrate that plasmonic light trapping effect can be used to improve all the main device characteristics of self-assembled InGaAs/GaAs quantum dot solar cell. The underlying physical processes of carrier occupation, transportation, and recombination within the plasmonic quantum dot solar cells will be discussed.

AB - We demonstrate that plasmonic light trapping effect can be used to improve all the main device characteristics of self-assembled InGaAs/GaAs quantum dot solar cell. The underlying physical processes of carrier occupation, transportation, and recombination within the plasmonic quantum dot solar cells will be discussed.

UR - http://www.scopus.com/inward/record.url?scp=84855995267&partnerID=8YFLogxK

U2 - 10.1109/PHO.2011.6110590

DO - 10.1109/PHO.2011.6110590

M3 - Conference contribution

SN - 9781424489404

T3 - IEEE Photonic Society 24th Annual Meeting, PHO 2011

SP - 387

EP - 388

BT - IEEE Photonic Society 24th Annual Meeting, PHO 2011

T2 - 24th Annual Meeting on IEEE Photonic Society, PHO 2011

Y2 - 9 October 2011 through 13 October 2011

ER -

Plasmonic light trapping effect on properties of InGaAs/GaAs quantum dot solar cells

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