TY - GEN
T1 - Plasmonics for III-V semiconductor solar cells
AU - Mokkapati, S.
AU - Lu, H. F.
AU - Turner, S.
AU - Fu, L.
AU - Tan, H. H.
AU - Jagadish, C.
PY - 2012
Y1 - 2012
N2 - III-V semiconductors like GaAs and InGaN are very promising candidates for solar cells. While GaAs has near-ideal bandgap to reach the maximum possible efficiency limit for single junction solar cells, InGaN provides the ability to tune the bandgap of absorbing layers over a wide energy range. Since III-V semiconductors are mostly direct bandgap semiconductors, they are also very strong absorbers of light. Currently novel solar cell designs based on nanostructured absorbers like quantum dots1,2 or nanowires are under investigation to demonstrate high efficiency solar cells.
AB - III-V semiconductors like GaAs and InGaN are very promising candidates for solar cells. While GaAs has near-ideal bandgap to reach the maximum possible efficiency limit for single junction solar cells, InGaN provides the ability to tune the bandgap of absorbing layers over a wide energy range. Since III-V semiconductors are mostly direct bandgap semiconductors, they are also very strong absorbers of light. Currently novel solar cell designs based on nanostructured absorbers like quantum dots1,2 or nanowires are under investigation to demonstrate high efficiency solar cells.
UR - http://www.scopus.com/inward/record.url?scp=84871734588&partnerID=8YFLogxK
U2 - 10.1109/IPCon.2012.6358486
DO - 10.1109/IPCon.2012.6358486
M3 - Conference contribution
SN - 9781457707315
T3 - 2012 IEEE Photonics Conference, IPC 2012
SP - 56
EP - 57
BT - 2012 IEEE Photonics Conference, IPC 2012
T2 - 25th IEEE Photonics Conference, IPC 2012
Y2 - 23 September 2012 through 27 September 2012
ER -