@inproceedings{6a890a5b2f204e50af5d68f4d373167c,
title = "Plasmonics for III-V semiconductor solar cells",
abstract = "III-V semiconductors like GaAs and InGaN are very promising candidates for solar cells. While GaAs has near-ideal bandgap to reach the maximum possible efficiency limit for single junction solar cells, InGaN provides the ability to tune the bandgap of absorbing layers over a wide energy range. Since III-V semiconductors are mostly direct bandgap semiconductors, they are also very strong absorbers of light. Currently novel solar cell designs based on nanostructured absorbers like quantum dots1,2 or nanowires are under investigation to demonstrate high efficiency solar cells.",
author = "S. Mokkapati and Lu, \{H. F.\} and S. Turner and L. Fu and Tan, \{H. H.\} and C. Jagadish",
year = "2012",
doi = "10.1109/IPCon.2012.6358486",
language = "English",
isbn = "9781457707315",
series = "2012 IEEE Photonics Conference, IPC 2012",
pages = "56--57",
booktitle = "2012 IEEE Photonics Conference, IPC 2012",
note = "25th IEEE Photonics Conference, IPC 2012 ; Conference date: 23-09-2012 Through 27-09-2012",
}