Platinum atom location on the internal walls of nanocavities investigated by ion channeling analysis

Atomic locations of Pt trapped at hydrogen-induced cavities in Si have been investigated by ion channeling analysis. A Pt dose of 1 × 10¹⁴ cm^-2, corresponding to a monolayer coverage of the internal walls of cavities, was implanted into cavity-containing samples. The gettering of Pt to the cavities was induced by annealing at 850 °C for 1 h. Clear channeling effects were observed in aligned and random backscattering spectra for the 〈1 0 0〉, 〈1 1 0〉 and 〈1 1 1〉 axes. Angular yield profiles for three crystalline axes exhibited dips with a narrowing of Pt signal half width compared with the Si matrix. Results suggested that the Pt atoms trapped at the cavities are closely aligned with the Si atomic strings bounding axial channels in Si.