Point defect engineered Si sub-bandgap light-emitting diode

Jiming Bao; Malek Tabbal; Taegon Kim; Supakit Charnvanichborikarn; James S. Williams; Michael J. Aziz; Federico Capasso

doi:10.1364/OE.15.006727

Point defect engineered Si sub-bandgap light-emitting diode

Jiming Bao, Malek Tabbal, Taegon Kim, Supakit Charnvanichborikarn, James S. Williams, Michael J. Aziz^*, Federico Capasso

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Abstract

We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line at 1218 nm originates.

Original language	English
Pages (from-to)	6727-6733
Number of pages	7
Journal	Optics Express
Volume	15
Issue number	11
DOIs	https://doi.org/10.1364/OE.15.006727
Publication status	Published - 28 May 2007

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title = "Point defect engineered Si sub-bandgap light-emitting diode",

abstract = "We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line at 1218 nm originates.",

author = "Jiming Bao and Malek Tabbal and Taegon Kim and Supakit Charnvanichborikarn and Williams, {James S.} and Aziz, {Michael J.} and Federico Capasso",

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AU - Bao, Jiming

AU - Tabbal, Malek

AU - Kim, Taegon

AU - Charnvanichborikarn, Supakit

AU - Williams, James S.

AU - Aziz, Michael J.

AU - Capasso, Federico

PY - 2007/5/28

Y1 - 2007/5/28

N2 - We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line at 1218 nm originates.

AB - We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line at 1218 nm originates.

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DO - 10.1364/OE.15.006727

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VL - 15

SP - 6727

EP - 6733

JO - Optics Express

JF - Optics Express

IS - 11

ER -

Point defect engineered Si sub-bandgap light-emitting diode

Abstract

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