@inproceedings{1d05267a6bbc48a499b357d2f28c4891,
title = "Point defect engineered Si sub-bandgap light-emitting diodes",
abstract = "We present a novel approach to enhance light emission in Si and demonstrate sub-bandgap light-emitting diodes (LED) based on the introduction of point defects. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create LEDs containing self-interstitial-rich optically active regions. Procedures to fabricate LEDs on a bulk silicon substrate and on a silicon-on-insulator (SOI) wafer will be presented, and methods to improve device performances will be discussed. The control and utilization of point defects represents a new approach toward creating Si in a stable, optically active form for Si-based optoelectronics.",
keywords = "Ion implantation, Light-emitting diode, Point defects, Self-interstitial, Silicon",
author = "Jiming Bao and Supakit Charnvanichborikarn and Yu Yang and Malek Tabbal and Byungha Shin and Jennifer Wong-Leung and Williams, {James S.} and Aziz, {Michael J.} and Federico Capasso",
year = "2008",
doi = "10.1117/12.758543",
language = "English",
isbn = "9780819469717",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV",
note = "Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV ; Conference date: 05-12-2007 Through 07-12-2007",
}