Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures

Mohanchand Paladugu; Jin Zou; Ya Nan Guo; Xin Zhang; Hannah J. Joyce; Qiang Gao; H. Hoe Tan; C. Jagadish; Yong Kim

doi:10.1063/1.3033551

Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures

Mohanchand Paladugu, Jin Zou^*, Ya Nan Guo, Xin Zhang, Hannah J. Joyce, Qiang Gao, H. Hoe Tan, C. Jagadish, Yong Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

The structural and morphological characteristics of InAs/GaAs radial nanowire heterostructures were investigated using transmission electron microscopy. It has been found that the radial growth of InAs was preferentially initiated on the { 112 } A sidewalls of GaAs nanowires. This preferential deposition leads to extraordinarily asymmetric InAs/GaAs radial nanowire heterostructures. Such formation of radial nanowire heterostructures provides an opportunity to engineer hierarchical nanostructures, which further widens the potential applications of semiconductor nanostructures.

Original language	English
Article number	201908
Journal	Applied Physics Letters
Volume	93
Issue number	20
DOIs	https://doi.org/10.1063/1.3033551
Publication status	Published - 2008

Access to Document

10.1063/1.3033551

Cite this

@article{2945c6af51f9450593e4ac8df9f4f253,

title = "Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures",

abstract = "The structural and morphological characteristics of InAs/GaAs radial nanowire heterostructures were investigated using transmission electron microscopy. It has been found that the radial growth of InAs was preferentially initiated on the { 112 } A sidewalls of GaAs nanowires. This preferential deposition leads to extraordinarily asymmetric InAs/GaAs radial nanowire heterostructures. Such formation of radial nanowire heterostructures provides an opportunity to engineer hierarchical nanostructures, which further widens the potential applications of semiconductor nanostructures.",

author = "Mohanchand Paladugu and Jin Zou and Guo, {Ya Nan} and Xin Zhang and Joyce, {Hannah J.} and Qiang Gao and Tan, {H. Hoe} and C. Jagadish and Yong Kim",

year = "2008",

doi = "10.1063/1.3033551",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures

AU - Paladugu, Mohanchand

AU - Zou, Jin

AU - Guo, Ya Nan

AU - Zhang, Xin

AU - Joyce, Hannah J.

AU - Gao, Qiang

AU - Tan, H. Hoe

AU - Jagadish, C.

AU - Kim, Yong

PY - 2008

Y1 - 2008

N2 - The structural and morphological characteristics of InAs/GaAs radial nanowire heterostructures were investigated using transmission electron microscopy. It has been found that the radial growth of InAs was preferentially initiated on the { 112 } A sidewalls of GaAs nanowires. This preferential deposition leads to extraordinarily asymmetric InAs/GaAs radial nanowire heterostructures. Such formation of radial nanowire heterostructures provides an opportunity to engineer hierarchical nanostructures, which further widens the potential applications of semiconductor nanostructures.

AB - The structural and morphological characteristics of InAs/GaAs radial nanowire heterostructures were investigated using transmission electron microscopy. It has been found that the radial growth of InAs was preferentially initiated on the { 112 } A sidewalls of GaAs nanowires. This preferential deposition leads to extraordinarily asymmetric InAs/GaAs radial nanowire heterostructures. Such formation of radial nanowire heterostructures provides an opportunity to engineer hierarchical nanostructures, which further widens the potential applications of semiconductor nanostructures.

UR - http://www.scopus.com/inward/record.url?scp=56849103321&partnerID=8YFLogxK

U2 - 10.1063/1.3033551

DO - 10.1063/1.3033551

M3 - Article

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 201908

ER -

Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures

Abstract

Access to Document

Other files and links

Fingerprint

Cite this