Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate

Wen Sun; Yanan Guo; Hongyi Xu; Qiang Gao; Hark Hoe Tan; Chennupati Jagadish; Jin Zou

doi:10.1063/1.4834377

Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate

Wen Sun, Yanan Guo, Hongyi Xu, Qiang Gao, Hark Hoe Tan, Chennupati Jagadish, Jin Zou

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Simultaneous growth of 111_B free-standing and ±[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy {111}_B interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain {111}_B interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side {111}_B interfaces with the surrounding GaAs(P) material during the lateral nanowire growth.

Original language	English
Article number	223104
Journal	Applied Physics Letters
Volume	103
Issue number	22
DOIs	https://doi.org/10.1063/1.4834377
Publication status	Published - 25 Nov 2013

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@article{08331761d562464aad64dfc1801f36a3,

title = "Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate",

abstract = "Simultaneous growth of 111B free-standing and ±[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy {111}B interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain {111}B interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side {111}B interfaces with the surrounding GaAs(P) material during the lateral nanowire growth.",

author = "Wen Sun and Yanan Guo and Hongyi Xu and Qiang Gao and {Hoe Tan}, Hark and Chennupati Jagadish and Jin Zou",

year = "2013",

month = nov,

day = "25",

doi = "10.1063/1.4834377",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate

AU - Sun, Wen

AU - Guo, Yanan

AU - Xu, Hongyi

AU - Gao, Qiang

AU - Hoe Tan, Hark

AU - Jagadish, Chennupati

AU - Zou, Jin

PY - 2013/11/25

Y1 - 2013/11/25

N2 - Simultaneous growth of 111B free-standing and ±[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy {111}B interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain {111}B interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side {111}B interfaces with the surrounding GaAs(P) material during the lateral nanowire growth.

AB - Simultaneous growth of 111B free-standing and ±[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy {111}B interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain {111}B interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side {111}B interfaces with the surrounding GaAs(P) material during the lateral nanowire growth.

UR - http://www.scopus.com/inward/record.url?scp=84888626297&partnerID=8YFLogxK

U2 - 10.1063/1.4834377

DO - 10.1063/1.4834377

M3 - Article

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223104

ER -

Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate

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