Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

A. Mishra; L. V. Titova; T. B. Hoang; H. E. Jackson; L. M. Smith; J. M. Yarrison-Rice; Y. Kim; H. J. Joyce; Q. Gao; H. H. Tan; C. Jagadish

doi:10.1063/1.2828034

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

A. Mishra^*, L. V. Titova, T. B. Hoang, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, Y. Kim, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish

^*Corresponding author for this work

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Abstract

We use polarization-resolved and temperature-dependent photoluminescence of single zincblende (ZB) (cubic) and wurtzite (WZ) (hexagonal) InP nanowires to probe differences in selection rules and bandgaps between these two semiconductor nanostructures. The WZ nanowires exhibit a bandgap 80 meV higher in energy than the ZB nanowires. The temperature dependence of the PL is similar but not identical for the WZ and ZB nanowires. We find that ZB nanowires exhibit strong polarization parallel to the nanowire axis, while the WZ nanowires exhibit polarized emission perpendicular to the nanowire axis. This behavior is interpreted in terms of the different selection rules for WZ and ZB crystal structures.

Original language	English
Article number	263104
Journal	Applied Physics Letters
Volume	91
Issue number	26
DOIs	https://doi.org/10.1063/1.2828034
Publication status	Published - 2007

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title = "Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires",

abstract = "We use polarization-resolved and temperature-dependent photoluminescence of single zincblende (ZB) (cubic) and wurtzite (WZ) (hexagonal) InP nanowires to probe differences in selection rules and bandgaps between these two semiconductor nanostructures. The WZ nanowires exhibit a bandgap 80 meV higher in energy than the ZB nanowires. The temperature dependence of the PL is similar but not identical for the WZ and ZB nanowires. We find that ZB nanowires exhibit strong polarization parallel to the nanowire axis, while the WZ nanowires exhibit polarized emission perpendicular to the nanowire axis. This behavior is interpreted in terms of the different selection rules for WZ and ZB crystal structures.",

author = "A. Mishra and Titova, {L. V.} and Hoang, {T. B.} and Jackson, {H. E.} and Smith, {L. M.} and Yarrison-Rice, {J. M.} and Y. Kim and Joyce, {H. J.} and Q. Gao and Tan, {H. H.} and C. Jagadish",

year = "2007",

doi = "10.1063/1.2828034",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

AU - Mishra, A.

AU - Titova, L. V.

AU - Hoang, T. B.

AU - Jackson, H. E.

AU - Smith, L. M.

AU - Yarrison-Rice, J. M.

AU - Kim, Y.

AU - Joyce, H. J.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2007

Y1 - 2007

N2 - We use polarization-resolved and temperature-dependent photoluminescence of single zincblende (ZB) (cubic) and wurtzite (WZ) (hexagonal) InP nanowires to probe differences in selection rules and bandgaps between these two semiconductor nanostructures. The WZ nanowires exhibit a bandgap 80 meV higher in energy than the ZB nanowires. The temperature dependence of the PL is similar but not identical for the WZ and ZB nanowires. We find that ZB nanowires exhibit strong polarization parallel to the nanowire axis, while the WZ nanowires exhibit polarized emission perpendicular to the nanowire axis. This behavior is interpreted in terms of the different selection rules for WZ and ZB crystal structures.

AB - We use polarization-resolved and temperature-dependent photoluminescence of single zincblende (ZB) (cubic) and wurtzite (WZ) (hexagonal) InP nanowires to probe differences in selection rules and bandgaps between these two semiconductor nanostructures. The WZ nanowires exhibit a bandgap 80 meV higher in energy than the ZB nanowires. The temperature dependence of the PL is similar but not identical for the WZ and ZB nanowires. We find that ZB nanowires exhibit strong polarization parallel to the nanowire axis, while the WZ nanowires exhibit polarized emission perpendicular to the nanowire axis. This behavior is interpreted in terms of the different selection rules for WZ and ZB crystal structures.

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U2 - 10.1063/1.2828034

DO - 10.1063/1.2828034

M3 - Article

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 263104

ER -

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

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