@inproceedings{c0929e5d8b2b452797d35287f6af263b,
title = "Positioning of the active region in broad-waveguide laser for optimized hole injection",
abstract = "Ths active region position in broad-waveguide lasers can significantly influence the performance of the device due to significant differences in mobility between electrons and holes. An increase in output power by 25% was observed in lasers with the active region positioned close to the p-cladding layer.",
keywords = "Diode Lasers, Lasers, Quantum Well Lasers, Semiconductor Lasers",
author = "M. Lysevych and Tan, {H. H.} and F. Karouta and C. Jagadish",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 ; Conference date: 14-12-2014 Through 17-12-2014",
year = "2014",
month = feb,
day = "10",
doi = "10.1109/COMMAD.2014.7038647",
language = "English",
series = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "41--43",
editor = "Mariusz Martyniuk and Lorenzo Faraone",
booktitle = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",
address = "United States",
}