Positioning of the active region in broad-waveguide laser for optimized hole injection

M. Lysevych, H. H. Tan, F. Karouta, C. Jagadish

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Ths active region position in broad-waveguide lasers can significantly influence the performance of the device due to significant differences in mobility between electrons and holes. An increase in output power by 25% was observed in lasers with the active region positioned close to the p-cladding layer.

    Original languageEnglish
    Title of host publication2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
    EditorsMariusz Martyniuk, Lorenzo Faraone
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages41-43
    Number of pages3
    ISBN (Electronic)9781479968671
    DOIs
    Publication statusPublished - 10 Feb 2014
    Event2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia
    Duration: 14 Dec 201417 Dec 2014

    Publication series

    Name2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

    Conference

    Conference2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
    Country/TerritoryAustralia
    CityPerth
    Period14/12/1417/12/14

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