POx/Al2O3 stacks: Highly effective surface passivation of crystalline silicon with a large positive fixed charge

Lachlan E. Black; W. M.M. Kessels

doi:10.1063/1.5029460

PO_x/Al₂O₃ stacks: Highly effective surface passivation of crystalline silicon with a large positive fixed charge

Lachlan E. Black, W. M.M. Kessels

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18 Citations (Scopus)

Abstract

Thin-film stacks of phosphorus oxide (PO_x) and aluminium oxide (Al₂O₃) are shown to provide highly effective passivation of crystalline silicon (c-Si) surfaces. Surface recombination velocities as low as 1.7 cm s^-1 and saturation current densities J₀_s as low as 3.3 fA cm^-2 are obtained on n-type (100) c-Si surfaces passivated by 6 nm/14 nm thick PO_x/Al₂O₃ stacks deposited in an atomic layer deposition system and annealed at 450 °C. This excellent passivation can be attributed in part to an unusually large positive fixed charge density of up to 4.7 × 10¹² cm^-2, which makes such stacks especially suitable for passivation of n-type Si surfaces.

Original language	English
Article number	201603
Journal	Applied Physics Letters
Volume	112
Issue number	20
DOIs	https://doi.org/10.1063/1.5029460
Publication status	Published - 14 May 2018
Externally published	Yes

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title = "POx/Al2O3 stacks: Highly effective surface passivation of crystalline silicon with a large positive fixed charge",

abstract = "Thin-film stacks of phosphorus oxide (POx) and aluminium oxide (Al2O3) are shown to provide highly effective passivation of crystalline silicon (c-Si) surfaces. Surface recombination velocities as low as 1.7 cm s-1 and saturation current densities J0s as low as 3.3 fA cm-2 are obtained on n-type (100) c-Si surfaces passivated by 6 nm/14 nm thick POx/Al2O3 stacks deposited in an atomic layer deposition system and annealed at 450 °C. This excellent passivation can be attributed in part to an unusually large positive fixed charge density of up to 4.7 × 1012 cm-2, which makes such stacks especially suitable for passivation of n-type Si surfaces.",

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N2 - Thin-film stacks of phosphorus oxide (POx) and aluminium oxide (Al2O3) are shown to provide highly effective passivation of crystalline silicon (c-Si) surfaces. Surface recombination velocities as low as 1.7 cm s-1 and saturation current densities J0s as low as 3.3 fA cm-2 are obtained on n-type (100) c-Si surfaces passivated by 6 nm/14 nm thick POx/Al2O3 stacks deposited in an atomic layer deposition system and annealed at 450 °C. This excellent passivation can be attributed in part to an unusually large positive fixed charge density of up to 4.7 × 1012 cm-2, which makes such stacks especially suitable for passivation of n-type Si surfaces.

AB - Thin-film stacks of phosphorus oxide (POx) and aluminium oxide (Al2O3) are shown to provide highly effective passivation of crystalline silicon (c-Si) surfaces. Surface recombination velocities as low as 1.7 cm s-1 and saturation current densities J0s as low as 3.3 fA cm-2 are obtained on n-type (100) c-Si surfaces passivated by 6 nm/14 nm thick POx/Al2O3 stacks deposited in an atomic layer deposition system and annealed at 450 °C. This excellent passivation can be attributed in part to an unusually large positive fixed charge density of up to 4.7 × 1012 cm-2, which makes such stacks especially suitable for passivation of n-type Si surfaces.

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PO_x/Al₂O₃ stacks: Highly effective surface passivation of crystalline silicon with a large positive fixed charge

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