Abstract
Sapphire was implanted with Pt ions at room temperature and at liquid-nitrogen temperature, inducing correspondingly different amounts of accumulated damage in the target crystals. Subsequent thermal annealing at 1000 and at 1600 °C resulted in Pt precipitation with differing orientation relationships, associated with the degree of crystallinity of the sapphire matrix. The orientation relationships depended on whether Pt precipitated from sapphire or from a transition alumina phase that formed in partially amorphized substrates.
Original language | English |
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Pages (from-to) | 187-190 |
Number of pages | 4 |
Journal | Scripta Materialia |
Volume | 62 |
Issue number | 4 |
DOIs | |
Publication status | Published - Feb 2010 |