Preferential amorphisation of Ge nanocrystals in a silica matrix

M. C. Ridgway; G. D.M. Azevedo; R. G. Elliman; W. Wesch; C. J. Glover; R. Miller; D. J. Llewellyn; G. J. Foran; J. L. Hansen; A. Nylandsted Larsen

doi:10.1016/j.nimb.2005.08.024

Preferential amorphisation of Ge nanocrystals in a silica matrix

M. C. Ridgway^*, G. D.M. Azevedo, R. G. Elliman, W. Wesch, C. J. Glover, R. Miller, D. J. Llewellyn, G. J. Foran, J. L. Hansen, A. Nylandsted Larsen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Extended X-ray absorption fine structure and Raman spectroscopies have been used to compare the crystalline-to-amorphous phase transformation in nanocrystalline and polycrystalline Ge. We demonstrate Ge nanocrystals are extremely sensitive to ion irradiation and are rendered amorphous at an ion dose ∼40 times less than that required to amorphise bulk, crystalline standards. This rapid amorphisation is attributed to the higher-energy nanocrystalline structural state prior to irradiation, inhibited Frenkel pair recombination when Ge interstitials are recoiled into the matrix and preferential nucleation of the amorphous phase at the nanocrystal/matrix interface.

Original language	English
Pages (from-to)	121-124
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	242
Issue number	1-2
DOIs	https://doi.org/10.1016/j.nimb.2005.08.024
Publication status	Published - Jan 2006

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Ridgway, M. C., Azevedo, G. D. M., Elliman, R. G., Wesch, W., Glover, C. J., Miller, R., Llewellyn, D. J., Foran, G. J., Hansen, J. L., & Larsen, A. N. (2006). Preferential amorphisation of Ge nanocrystals in a silica matrix. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 242(1-2), 121-124. https://doi.org/10.1016/j.nimb.2005.08.024

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title = "Preferential amorphisation of Ge nanocrystals in a silica matrix",

abstract = "Extended X-ray absorption fine structure and Raman spectroscopies have been used to compare the crystalline-to-amorphous phase transformation in nanocrystalline and polycrystalline Ge. We demonstrate Ge nanocrystals are extremely sensitive to ion irradiation and are rendered amorphous at an ion dose ∼40 times less than that required to amorphise bulk, crystalline standards. This rapid amorphisation is attributed to the higher-energy nanocrystalline structural state prior to irradiation, inhibited Frenkel pair recombination when Ge interstitials are recoiled into the matrix and preferential nucleation of the amorphous phase at the nanocrystal/matrix interface.",

keywords = "Amorphisation, EXAFS, Ion irradiation, Nanocrystals, Raman",

author = "Ridgway, \{M. C.\} and Azevedo, \{G. D.M.\} and Elliman, \{R. G.\} and W. Wesch and Glover, \{C. J.\} and R. Miller and Llewellyn, \{D. J.\} and Foran, \{G. J.\} and Hansen, \{J. L.\} and Larsen, \{A. Nylandsted\}",

year = "2006",

month = jan,

doi = "10.1016/j.nimb.2005.08.024",

language = "English",

volume = "242",

pages = "121--124",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-2",

}

Ridgway, MC, Azevedo, GDM, Elliman, RG, Wesch, W, Glover, CJ, Miller, R, Llewellyn, DJ, Foran, GJ, Hansen, JL & Larsen, AN 2006, 'Preferential amorphisation of Ge nanocrystals in a silica matrix', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 242, no. 1-2, pp. 121-124. https://doi.org/10.1016/j.nimb.2005.08.024

TY - JOUR

T1 - Preferential amorphisation of Ge nanocrystals in a silica matrix

AU - Ridgway, M. C.

AU - Azevedo, G. D.M.

AU - Elliman, R. G.

AU - Wesch, W.

AU - Glover, C. J.

AU - Miller, R.

AU - Llewellyn, D. J.

AU - Foran, G. J.

AU - Hansen, J. L.

AU - Larsen, A. Nylandsted

PY - 2006/1

Y1 - 2006/1

N2 - Extended X-ray absorption fine structure and Raman spectroscopies have been used to compare the crystalline-to-amorphous phase transformation in nanocrystalline and polycrystalline Ge. We demonstrate Ge nanocrystals are extremely sensitive to ion irradiation and are rendered amorphous at an ion dose ∼40 times less than that required to amorphise bulk, crystalline standards. This rapid amorphisation is attributed to the higher-energy nanocrystalline structural state prior to irradiation, inhibited Frenkel pair recombination when Ge interstitials are recoiled into the matrix and preferential nucleation of the amorphous phase at the nanocrystal/matrix interface.

AB - Extended X-ray absorption fine structure and Raman spectroscopies have been used to compare the crystalline-to-amorphous phase transformation in nanocrystalline and polycrystalline Ge. We demonstrate Ge nanocrystals are extremely sensitive to ion irradiation and are rendered amorphous at an ion dose ∼40 times less than that required to amorphise bulk, crystalline standards. This rapid amorphisation is attributed to the higher-energy nanocrystalline structural state prior to irradiation, inhibited Frenkel pair recombination when Ge interstitials are recoiled into the matrix and preferential nucleation of the amorphous phase at the nanocrystal/matrix interface.

KW - Amorphisation

KW - EXAFS

KW - Ion irradiation

KW - Nanocrystals

KW - Raman

UR - https://www.scopus.com/pages/publications/28544434978

U2 - 10.1016/j.nimb.2005.08.024

DO - 10.1016/j.nimb.2005.08.024

M3 - Article

SN - 0168-583X

VL - 242

SP - 121

EP - 124

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

ER -

Preferential amorphisation of Ge nanocrystals in a silica matrix

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