Preferential amorphization and defect annihilation at nanocavities in silicon during ion irradiation

J. S. Williams; Xianfang Zhu; M. C. Ridgway; M. J. Conway; B. C. Williams; F. Fortuna; M. O. Ruault; H. Bernas

doi:10.1063/1.1334355

Preferential amorphization and defect annihilation at nanocavities in silicon during ion irradiation

J. S. Williams^*, Xianfang Zhu, M. C. Ridgway, M. J. Conway, B. C. Williams, F. Fortuna, M. O. Ruault, H. Bernas

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

Si containing a band of nanocavities has been irradiated with Si⁺ ions at elevated temperatures to study interactions of irradiation-induced defects with open volume defects. For irradiation at 100°C, nanocavities are shown to be preferential nucleation sites for amorphization. It is proposed that this behavior occurs to minimize the local free energy, whereby less dense amorphous Si is free to expand into the cavity open volume. Furthermore, for irradiation at 300°C, cavities are very efficient sinks for Si interstitials during irradiation, leaving a region denuded of interstitial-based clusters surrounding each nanocavity.

Original language	English
Pages (from-to)	4280-4282
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	26
DOIs	https://doi.org/10.1063/1.1334355
Publication status	Published - 25 Dec 2000

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@article{17647ea05a654f6b8fda306d79164608,

title = "Preferential amorphization and defect annihilation at nanocavities in silicon during ion irradiation",

abstract = "Si containing a band of nanocavities has been irradiated with Si+ ions at elevated temperatures to study interactions of irradiation-induced defects with open volume defects. For irradiation at 100°C, nanocavities are shown to be preferential nucleation sites for amorphization. It is proposed that this behavior occurs to minimize the local free energy, whereby less dense amorphous Si is free to expand into the cavity open volume. Furthermore, for irradiation at 300°C, cavities are very efficient sinks for Si interstitials during irradiation, leaving a region denuded of interstitial-based clusters surrounding each nanocavity.",

author = "Williams, {J. S.} and Xianfang Zhu and Ridgway, {M. C.} and Conway, {M. J.} and Williams, {B. C.} and F. Fortuna and Ruault, {M. O.} and H. Bernas",

year = "2000",

month = dec,

day = "25",

doi = "10.1063/1.1334355",

language = "English",

volume = "77",

pages = "4280--4282",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

TY - JOUR

T1 - Preferential amorphization and defect annihilation at nanocavities in silicon during ion irradiation

AU - Williams, J. S.

AU - Zhu, Xianfang

AU - Ridgway, M. C.

AU - Conway, M. J.

AU - Williams, B. C.

AU - Fortuna, F.

AU - Ruault, M. O.

AU - Bernas, H.

PY - 2000/12/25

Y1 - 2000/12/25

N2 - Si containing a band of nanocavities has been irradiated with Si+ ions at elevated temperatures to study interactions of irradiation-induced defects with open volume defects. For irradiation at 100°C, nanocavities are shown to be preferential nucleation sites for amorphization. It is proposed that this behavior occurs to minimize the local free energy, whereby less dense amorphous Si is free to expand into the cavity open volume. Furthermore, for irradiation at 300°C, cavities are very efficient sinks for Si interstitials during irradiation, leaving a region denuded of interstitial-based clusters surrounding each nanocavity.

AB - Si containing a band of nanocavities has been irradiated with Si+ ions at elevated temperatures to study interactions of irradiation-induced defects with open volume defects. For irradiation at 100°C, nanocavities are shown to be preferential nucleation sites for amorphization. It is proposed that this behavior occurs to minimize the local free energy, whereby less dense amorphous Si is free to expand into the cavity open volume. Furthermore, for irradiation at 300°C, cavities are very efficient sinks for Si interstitials during irradiation, leaving a region denuded of interstitial-based clusters surrounding each nanocavity.

UR - http://www.scopus.com/inward/record.url?scp=0000768806&partnerID=8YFLogxK

U2 - 10.1063/1.1334355

DO - 10.1063/1.1334355

M3 - Article

SN - 0003-6951

VL - 77

SP - 4280

EP - 4282

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Preferential amorphization and defect annihilation at nanocavities in silicon during ion irradiation

Abstract

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