Preferential nucleation and growth of InAs/GaAs(0 0 1) quantum dots on defected sites by droplet epitaxy

Z. B. Chen; W. Lei; B. Chen; Y. B. Wang; X. Z. Liao; H. H. Tan; J. Zou; S. P. Ringer; C. Jagadish

doi:10.1016/j.scriptamat.2013.07.020

Preferential nucleation and growth of InAs/GaAs(0 0 1) quantum dots on defected sites by droplet epitaxy

Z. B. Chen, W. Lei, B. Chen, Y. B. Wang, X. Z. Liao^*, H. H. Tan, J. Zou, S. P. Ringer, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A double-layer InAs/GaAs(0 0 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface nucleated and grew preferentially on top of the arms of the V-shaped defects. The mechanism behind the observed phenomenon was discussed.

Original language	English
Pages (from-to)	638-641
Number of pages	4
Journal	Scripta Materialia
Volume	69
Issue number	8
DOIs	https://doi.org/10.1016/j.scriptamat.2013.07.020
Publication status	Published - Oct 2013

Access to Document

10.1016/j.scriptamat.2013.07.020

Cite this

@article{65b526b57e764dbf90dba34cb53ac948,

title = "Preferential nucleation and growth of InAs/GaAs(0 0 1) quantum dots on defected sites by droplet epitaxy",

abstract = "A double-layer InAs/GaAs(0 0 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface nucleated and grew preferentially on top of the arms of the V-shaped defects. The mechanism behind the observed phenomenon was discussed.",

keywords = "Chemical vapour deposition, Crystalline defects, Droplet epitaxy, Electron microscopy, Quantum dots",

author = "Chen, {Z. B.} and W. Lei and B. Chen and Wang, {Y. B.} and Liao, {X. Z.} and Tan, {H. H.} and J. Zou and Ringer, {S. P.} and C. Jagadish",

year = "2013",

month = oct,

doi = "10.1016/j.scriptamat.2013.07.020",

language = "English",

volume = "69",

pages = "638--641",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Acta Materialia Inc",

number = "8",

}

TY - JOUR

T1 - Preferential nucleation and growth of InAs/GaAs(0 0 1) quantum dots on defected sites by droplet epitaxy

AU - Chen, Z. B.

AU - Lei, W.

AU - Chen, B.

AU - Wang, Y. B.

AU - Liao, X. Z.

AU - Tan, H. H.

AU - Zou, J.

AU - Ringer, S. P.

AU - Jagadish, C.

PY - 2013/10

Y1 - 2013/10

N2 - A double-layer InAs/GaAs(0 0 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface nucleated and grew preferentially on top of the arms of the V-shaped defects. The mechanism behind the observed phenomenon was discussed.

AB - A double-layer InAs/GaAs(0 0 1) quantum dot structure grown by droplet epitaxy was found to have V-shaped defects, with the two arms of each defect originating from a buried quantum dot and extended to the top surface. Quantum dots on the sample surface nucleated and grew preferentially on top of the arms of the V-shaped defects. The mechanism behind the observed phenomenon was discussed.

KW - Chemical vapour deposition

KW - Crystalline defects

KW - Droplet epitaxy

KW - Electron microscopy

KW - Quantum dots

UR - http://www.scopus.com/inward/record.url?scp=84883051786&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2013.07.020

DO - 10.1016/j.scriptamat.2013.07.020

M3 - Article

SN - 1359-6462

VL - 69

SP - 638

EP - 641

JO - Scripta Materialia

JF - Scripta Materialia

IS - 8

ER -

Preferential nucleation and growth of InAs/GaAs(0 0 1) quantum dots on defected sites by droplet epitaxy

Abstract

Access to Document

Other files and links

Fingerprint

Cite this