Probing 5f -state configurations in URu2Si2 with U LIII -edge resonant x-ray emission spectroscopy

C. H. Booth, S. A. Medling, J. G. Tobin, R. E. Baumbach, E. D. Bauer, D. Sokaras, D. Nordlund, T. C. Weng

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    Abstract

    Resonant x-ray emission spectroscopy (RXES) was employed at the U LIII absorption edge and the Lα1 emission line to explore the 5f occupancy, nf, and the degree of 5f-orbital delocalization in the hidden-order compound URu2Si2. By comparing to suitable reference materials such as UF4, UCd11, and α-U, we conclude that the 5f orbital in URu2Si2 is at least partially delocalized with nf=2.87±0.08, and does not change with temperature down to 10 K within the estimated error. These results place further constraints on theoretical explanations of the hidden order, especially those requiring a localized f2 ground state.

    Original languageEnglish
    Article number045121
    JournalPhysical Review B
    Volume94
    Issue number4
    DOIs
    Publication statusPublished - 15 Jul 2016

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