Probing the critical electronic properties of III-V nanowires using optical pump-terahertz probe spectroscopy

Hannah J. Joyce, Callum J. Docherty, Chaw Keong Yong, Jennifer Wong-Leung, Qiang Gao, Suriati Paiman, H. Hoe Tan, Chennupati Jagadish, James Lloyd-Hughes, Laura M. Herz, Michael B. Johnston

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Optical pump-terahertz probe spectroscopy was used to study the key electronic properties of GaAs, InAs and InP nanowires at room temperature. Of all nanowires studied, InAs nanowires exhibited the highest mobilities of 6000 cm2V-1s-1. InP nanowires featured the longest photoconductivity lifetimes and an exceptionally low surface recombination velocity of 170 cm/s.

    Original languageEnglish
    Title of host publication2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013
    DOIs
    Publication statusPublished - 2013
    Event2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013 - Mainz, Germany
    Duration: 1 Sept 20136 Sept 2013

    Publication series

    NameInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
    ISSN (Print)2162-2027
    ISSN (Electronic)2162-2035

    Conference

    Conference2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2013
    Country/TerritoryGermany
    CityMainz
    Period1/09/136/09/13

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