Probing the indium nitride lattice locally with the radioisotope probe 111In/Cd

Heiko Timmers; Rakesh Dogra; Santosh K. Shrestha; A. Vernon J. Edge; Aidan P. Byrne

doi:10.1109/COMMAD.2004.1577481

Probing the indium nitride lattice locally with the radioisotope probe ¹¹¹In/Cd

Heiko Timmers^*, Rakesh Dogra, Santosh K. Shrestha, A. Vernon J. Edge, Aidan P. Byrne

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The lattice structure of both InN grains with submicron dimensions and a MBE-grown InN film have been studied with the radioisotope probe ¹¹¹in/Cd and Perturbed Angular Correlation spectroscopy. The quadrupole interaction frequency of the probe in this material has been measured to be of the order of 28 MHz, consistent with results for ALN and GaN. Strong damping of the signal indicates that InN has a highly defective lattice with diverse defect structures, which are not cured by annealing in the accessible temperature range.

Original language	English
Title of host publication	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings
Pages	17-20
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.2004.1577481
Publication status	Published - 2005
Event	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia Duration: 8 Dec 2004 → 10 Dec 2004

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
Country/Territory	Australia
City	Bribane, QLD
Period	8/12/04 → 10/12/04

Access to Document

10.1109/COMMAD.2004.1577481

Cite this

Timmers, H., Dogra, R., Shrestha, S. K., Edge, A. V. J., & Byrne, A. P. (2005). Probing the indium nitride lattice locally with the radioisotope probe ¹¹¹In/Cd. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings (pp. 17-20). Article 1577481 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2004.1577481

@inproceedings{07eca110f66742359a072a69c3b382ff,

title = "Probing the indium nitride lattice locally with the radioisotope probe 111In/Cd",

abstract = "The lattice structure of both InN grains with submicron dimensions and a MBE-grown InN film have been studied with the radioisotope probe 111in/Cd and Perturbed Angular Correlation spectroscopy. The quadrupole interaction frequency of the probe in this material has been measured to be of the order of 28 MHz, consistent with results for ALN and GaN. Strong damping of the signal indicates that InN has a highly defective lattice with diverse defect structures, which are not cured by annealing in the accessible temperature range.",

keywords = "Annealing, In/Cd, InN, MBE growth, Nanowires, PAC, Radioisotope probe",

author = "Heiko Timmers and Rakesh Dogra and Shrestha, {Santosh K.} and Edge, {A. Vernon J.} and Byrne, {Aidan P.}",

year = "2005",

doi = "10.1109/COMMAD.2004.1577481",

language = "English",

isbn = "0780388208",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "17--20",

booktitle = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings",

note = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 08-12-2004 Through 10-12-2004",

}

Timmers, H, Dogra, R, Shrestha, SK, Edge, AVJ & Byrne, AP 2005, Probing the indium nitride lattice locally with the radioisotope probe ¹¹¹In/Cd. in COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings., 1577481, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 17-20, COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Bribane, QLD, Australia, 8/12/04. https://doi.org/10.1109/COMMAD.2004.1577481

Probing the indium nitride lattice locally with the radioisotope probe ¹¹¹In/Cd. / Timmers, Heiko; Dogra, Rakesh; Shrestha, Santosh K. et al.
COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 17-20 1577481 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Probing the indium nitride lattice locally with the radioisotope probe 111In/Cd

AU - Timmers, Heiko

AU - Dogra, Rakesh

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AU - Edge, A. Vernon J.

AU - Byrne, Aidan P.

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Y1 - 2005

N2 - The lattice structure of both InN grains with submicron dimensions and a MBE-grown InN film have been studied with the radioisotope probe 111in/Cd and Perturbed Angular Correlation spectroscopy. The quadrupole interaction frequency of the probe in this material has been measured to be of the order of 28 MHz, consistent with results for ALN and GaN. Strong damping of the signal indicates that InN has a highly defective lattice with diverse defect structures, which are not cured by annealing in the accessible temperature range.

AB - The lattice structure of both InN grains with submicron dimensions and a MBE-grown InN film have been studied with the radioisotope probe 111in/Cd and Perturbed Angular Correlation spectroscopy. The quadrupole interaction frequency of the probe in this material has been measured to be of the order of 28 MHz, consistent with results for ALN and GaN. Strong damping of the signal indicates that InN has a highly defective lattice with diverse defect structures, which are not cured by annealing in the accessible temperature range.

KW - Annealing

KW - In/Cd

KW - InN

KW - MBE growth

KW - Nanowires

KW - PAC

KW - Radioisotope probe

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BT - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings

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Timmers H, Dogra R, Shrestha SK, Edge AVJ, Byrne AP. Probing the indium nitride lattice locally with the radioisotope probe ¹¹¹In/Cd. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 17-20. 1577481. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2004.1577481