Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy

H. E. Jackson; S. Perera; K. Pemasiri; L. M. Smith; J. Yarrison-Rice; J. H. Kang; Q. Gao; H. H. Tan; C. Jagadish; Y. Guo; J. Zou

doi:10.1063/1.3666463

Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy

H. E. Jackson^*, S. Perera, K. Pemasiri, L. M. Smith, J. Yarrison-Rice, J. H. Kang, Q. Gao, H. H. Tan, C. Jagadish, Y. Guo, J. Zou

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

We use time-resolved photoluminescence and photoluminescence excitation spectroscopy to obtain the valence band parameters of wurtzite InP nanowires. We observe the A, B, and C hole bands for these nanowires and obtain both the crystal field and the spin-orbit energies for wurtzite InP nanowires.

Original language	English
Title of host publication	Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages	481-482
Number of pages	2
DOIs	https://doi.org/10.1063/1.3666463
Publication status	Published - 2011
Event	30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of Duration: 25 Jul 2010 → 30 Jul 2010

Publication series

Name	AIP Conference Proceedings
Volume	1399
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	30th International Conference on the Physics of Semiconductors, ICPS-30
Country/Territory	Korea, Republic of
City	Seoul
Period	25/07/10 → 30/07/10

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10.1063/1.3666463

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Jackson, H. E., Perera, S., Pemasiri, K., Smith, L. M., Yarrison-Rice, J., Kang, J. H., Gao, Q., Tan, H. H., Jagadish, C., Guo, Y., & Zou, J. (2011). Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 481-482). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666463

@inproceedings{641519c314944594891c0bcc9a464e94,

title = "Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy",

abstract = "We use time-resolved photoluminescence and photoluminescence excitation spectroscopy to obtain the valence band parameters of wurtzite InP nanowires. We observe the A, B, and C hole bands for these nanowires and obtain both the crystal field and the spin-orbit energies for wurtzite InP nanowires.",

keywords = "InP, crystal field, photoluminescence excitation spectroscopy, spin orbit energy, wurtzite",

author = "Jackson, {H. E.} and S. Perera and K. Pemasiri and Smith, {L. M.} and J. Yarrison-Rice and Kang, {J. H.} and Q. Gao and Tan, {H. H.} and C. Jagadish and Y. Guo and J. Zou",

year = "2011",

doi = "10.1063/1.3666463",

language = "English",

isbn = "9780735410022",

series = "AIP Conference Proceedings",

pages = "481--482",

booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",

note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",

}

Jackson, HE, Perera, S, Pemasiri, K, Smith, LM, Yarrison-Rice, J, Kang, JH, Gao, Q, Tan, HH , Jagadish, C, Guo, Y & Zou, J 2011, Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy. in Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. AIP Conference Proceedings, vol. 1399, pp. 481-482, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 25/07/10. https://doi.org/10.1063/1.3666463

Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy. / Jackson, H. E.; Perera, S.; Pemasiri, K. et al.
Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 481-482 (AIP Conference Proceedings; Vol. 1399).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy

AU - Jackson, H. E.

AU - Perera, S.

AU - Pemasiri, K.

AU - Smith, L. M.

AU - Yarrison-Rice, J.

AU - Kang, J. H.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Guo, Y.

AU - Zou, J.

PY - 2011

Y1 - 2011

N2 - We use time-resolved photoluminescence and photoluminescence excitation spectroscopy to obtain the valence band parameters of wurtzite InP nanowires. We observe the A, B, and C hole bands for these nanowires and obtain both the crystal field and the spin-orbit energies for wurtzite InP nanowires.

AB - We use time-resolved photoluminescence and photoluminescence excitation spectroscopy to obtain the valence band parameters of wurtzite InP nanowires. We observe the A, B, and C hole bands for these nanowires and obtain both the crystal field and the spin-orbit energies for wurtzite InP nanowires.

KW - InP

KW - crystal field

KW - photoluminescence excitation spectroscopy

KW - spin orbit energy

KW - wurtzite

UR - http://www.scopus.com/inward/record.url?scp=84862784783&partnerID=8YFLogxK

U2 - 10.1063/1.3666463

DO - 10.1063/1.3666463

M3 - Conference contribution

SN - 9780735410022

T3 - AIP Conference Proceedings

SP - 481

EP - 482

BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30

T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30

Y2 - 25 July 2010 through 30 July 2010

ER -

Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy

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