Abstract
Multicrystalline silicon (mcSi) solar cell efficiency is primarily influenced by minority carrier lifetime of the material. Lifetimes in mcSi vary strongly during processing. Step by step monitoring has allowed identification of both beneficial and poor processing steps and lead to rapid improvements in cell efficiency. Phosphorous gettering significantly improves lifetimes in the mcSi substrates investigated, where effective lifetimes of 250 μs in 1.5 Ωcm mcSi have been observed. This has permitted the achievement of record open circuit voltages greater than 655 mV and efficiencies greater than 18% with 0.2 Ωcm and 0.5 Ωcm mcSi solar cells.
| Original language | English |
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| Pages | 8-11 |
| Number of pages | 4 |
| Publication status | Published - 1996 |
| Event | Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust Duration: 8 Dec 1996 → 11 Dec 1996 |
Conference
| Conference | Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD |
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| City | Canberra, Aust |
| Period | 8/12/96 → 11/12/96 |