Abstract
Hot Carrier cells aim to tackle the carrier thermalisation loss after absorption of above band-gap photons by separating and collecting carriers before they thermalise. This requires slowed carrier cooling in an absorber material and collection through narrow selective energy contacts. Previous work has proved the concept of these selective energy contacts using resonant tunneling in Si QD double barrier structures. Further experimental work on electrical and optical excitation of these structures will be re presented. Previous modeling work has demonstrated the possibility of slowing the rate of carrier cooling by modifying the phonon dispersion in QD superlattices. Developments in this modeling which indicate the critical importance of the interface are also presented.
Original language | English |
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Title of host publication | Technical Digest, 17th International Photovoltaics Science and Engineering Conference (PVSEC-17) |
Subtitle of host publication | Proc. on CD-ROM |
Publisher | Fraunhofer IAO |
Pages | 295-298 |
Number of pages | 4 |
Publication status | Published - 7 Dec 2007 |
Externally published | Yes |
Event | 17th International Photovoltaic Science and Engineering Conference, PVSEC 2007 - Fukuoka, Japan Duration: 3 Dec 2007 → 7 Dec 2007 https://www.sciencedirect.com/journal/solar-energy-materials-and-solar-cells/vol/93/issue/6 https://publica.fraunhofer.de/entities/mainwork/4ae4ccb4-2a96-48d5-8bec-23aa4d1ed1f1 |
Conference
Conference | 17th International Photovoltaic Science and Engineering Conference, PVSEC 2007 |
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Abbreviated title | Int'l PVSEC-17 |
Country/Territory | Japan |
City | Fukuoka |
Period | 3/12/07 → 7/12/07 |
Internet address |