Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures

L. H. Willems Van Beveren; J. C. McCallum; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2012.6472354

Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures

L. H. Willems Van Beveren^*, J. C. McCallum, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium temperatures to be used for opto-electronic device characterization.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	49-50
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472354
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472354

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Willems Van Beveren, L. H., McCallum, J. C., Tan, H. H., & Jagadish, C. (2012). Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 49-50). Article 6472354 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472354

Willems Van Beveren, L. H. ; McCallum, J. C. ; Tan, H. H. et al. / Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures. 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. pp. 49-50 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

@inproceedings{304328284a2d4a058641b20a120b64e4,

title = "Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures",

abstract = "In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium temperatures to be used for opto-electronic device characterization.",

author = "{Willems Van Beveren}, {L. H.} and McCallum, {J. C.} and Tan, {H. H.} and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472354",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "49--50",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Willems Van Beveren, LH, McCallum, JC, Tan, HH & Jagadish, C 2012, Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472354, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 49-50, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472354

Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures. / Willems Van Beveren, L. H.; McCallum, J. C.; Tan, H. H. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 49-50 6472354 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Willems Van Beveren, L. H.

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AU - Tan, H. H.

AU - Jagadish, C.

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AB - In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium temperatures to be used for opto-electronic device characterization.

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DO - 10.1109/COMMAD.2012.6472354

M3 - Conference contribution

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

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BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

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Willems Van Beveren LH, McCallum JC, Tan HH , Jagadish C. Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 49-50. 6472354. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472354

Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures

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