PROGRESS WITH ALL-SILICON TANDEM CELLS BASED ON SILICON QUANTUM DOTS IN A DIELECTRIC MATRIX (plenary talk)

Martin Green*, Gavin Conibeer, Dirk Koenig, Eun-Chel Cho, Dengyuan Song, Young-Hyun Cho, Thipwan Fangsuwannarak, Yidan Huang, Giuseppe Scardera, Edwin Pink, Shujuan Huang, scott Jiang, Thorsten Trupke, R. Corkish, Tom Puzzer

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Mature PV technologies are likely to push to ever increasing efficiency due to the cost leverage provided by high efficiency. Although a range of “third generation” techniques has been suggested for improving cell efficiency beyond that of a single cell, the tandem cell approach is the only one so far to give improved experimental performance. The reliability of silicon wafer-based modules is well established. However, there are no obvious candidates for suitable high-bandgap cells to use with silicon that would not, to some extent, compromise this reliability and stability or depend upon toxic or scarce elements. This work seeks to engineer wide-bandgap silicon-based materials by using quantum-confinement in silicon quantum dots dispersed in a matrix of silicon carbide, nitride or oxide.
Keywords: Silicon, Quantum Dots, Tandem
Original languageEnglish
Pages10-14
Number of pages5
Publication statusPublished - 8 Sept 2006
Externally publishedYes
EventEuropean Photovoltaic Solar Energy Conference 2006 - Dresden Germany
Duration: 1 Jan 2006 → …

Conference

ConferenceEuropean Photovoltaic Solar Energy Conference 2006
Period1/01/06 → …
OtherSeptember 4-8 2006

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