Abstract
Mature PV technologies are likely to push to ever increasing efficiency due to the cost leverage provided by high efficiency. Although a range of “third generation” techniques has been suggested for improving cell efficiency beyond that of a single cell, the tandem cell approach is the only one so far to give improved experimental performance. The reliability of silicon wafer-based modules is well established. However, there are no obvious candidates for suitable high-bandgap cells to use with silicon that would not, to some extent, compromise this reliability and stability or depend upon toxic or scarce elements. This work seeks to engineer wide-bandgap silicon-based materials by using quantum-confinement in silicon quantum dots dispersed in a matrix of silicon carbide, nitride or oxide.
Keywords: Silicon, Quantum Dots, Tandem
Keywords: Silicon, Quantum Dots, Tandem
Original language | English |
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Pages | 10-14 |
Number of pages | 5 |
Publication status | Published - 8 Sept 2006 |
Externally published | Yes |
Event | European Photovoltaic Solar Energy Conference 2006 - Dresden Germany Duration: 1 Jan 2006 → … |
Conference
Conference | European Photovoltaic Solar Energy Conference 2006 |
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Period | 1/01/06 → … |
Other | September 4-8 2006 |