PROGRESS WITH ALL-SILICON TANDEM CELLS BASED ON SILICON QUANTUM DOTS IN A DIELECTRIC MATRIX (plenary talk)

Martin Green; Gavin Conibeer; Dirk Koenig; Eun-Chel Cho; Dengyuan Song; Young-Hyun Cho; Thipwan Fangsuwannarak; Yidan Huang; Giuseppe Scardera; Edwin Pink; Shujuan Huang; scott Jiang; Thorsten Trupke; R. Corkish; Tom Puzzer

PROGRESS WITH ALL-SILICON TANDEM CELLS BASED ON SILICON QUANTUM DOTS IN A DIELECTRIC MATRIX (plenary talk)

Martin Green^*, Gavin Conibeer, Dirk Koenig, Eun-Chel Cho, Dengyuan Song, Young-Hyun Cho, Thipwan Fangsuwannarak, Yidan Huang, Giuseppe Scardera, Edwin Pink, Shujuan Huang, scott Jiang, Thorsten Trupke, R. Corkish, Tom Puzzer

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

Mature PV technologies are likely to push to ever increasing efficiency due to the cost leverage provided by high efficiency. Although a range of “third generation” techniques has been suggested for improving cell efficiency beyond that of a single cell, the tandem cell approach is the only one so far to give improved experimental performance. The reliability of silicon wafer-based modules is well established. However, there are no obvious candidates for suitable high-bandgap cells to use with silicon that would not, to some extent, compromise this reliability and stability or depend upon toxic or scarce elements. This work seeks to engineer wide-bandgap silicon-based materials by using quantum-confinement in silicon quantum dots dispersed in a matrix of silicon carbide, nitride or oxide.
Keywords: Silicon, Quantum Dots, Tandem

Original language	English
Pages	10-14
Number of pages	5
Publication status	Published - 8 Sept 2006
Externally published	Yes
Event	European Photovoltaic Solar Energy Conference 2006 - Dresden Germany Duration: 1 Jan 2006 → …

Conference

Conference	European Photovoltaic Solar Energy Conference 2006
Period	1/01/06 → …
Other	September 4-8 2006

Cite this

Green, M., Conibeer, G., Koenig, D., Cho, E.-C., Song, D., Cho, Y.-H., Fangsuwannarak, T., Huang, Y., Scardera, G., Pink, E., Huang, S., Jiang, S., Trupke, T., Corkish, R., & Puzzer, T. (2006). PROGRESS WITH ALL-SILICON TANDEM CELLS BASED ON SILICON QUANTUM DOTS IN A DIELECTRIC MATRIX (plenary talk). 10-14. Paper presented at European Photovoltaic Solar Energy Conference 2006.

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title = "PROGRESS WITH ALL-SILICON TANDEM CELLS BASED ON SILICON QUANTUM DOTS IN A DIELECTRIC MATRIX (plenary talk)",

abstract = "Mature PV technologies are likely to push to ever increasing efficiency due to the cost leverage provided by high efficiency. Although a range of “third generation” techniques has been suggested for improving cell efficiency beyond that of a single cell, the tandem cell approach is the only one so far to give improved experimental performance. The reliability of silicon wafer-based modules is well established. However, there are no obvious candidates for suitable high-bandgap cells to use with silicon that would not, to some extent, compromise this reliability and stability or depend upon toxic or scarce elements. This work seeks to engineer wide-bandgap silicon-based materials by using quantum-confinement in silicon quantum dots dispersed in a matrix of silicon carbide, nitride or oxide. Keywords: Silicon, Quantum Dots, Tandem",

author = "Martin Green and Gavin Conibeer and Dirk Koenig and Eun-Chel Cho and Dengyuan Song and Young-Hyun Cho and Thipwan Fangsuwannarak and Yidan Huang and Giuseppe Scardera and Edwin Pink and Shujuan Huang and scott Jiang and Thorsten Trupke and R. Corkish and Tom Puzzer",

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note = "European Photovoltaic Solar Energy Conference 2006 ; Conference date: 01-01-2006",

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Green, M, Conibeer, G, Koenig, D, Cho, E-C, Song, D, Cho, Y-H, Fangsuwannarak, T, Huang, Y, Scardera, G, Pink, E, Huang, S, Jiang, S, Trupke, T, Corkish, R & Puzzer, T 2006, 'PROGRESS WITH ALL-SILICON TANDEM CELLS BASED ON SILICON QUANTUM DOTS IN A DIELECTRIC MATRIX (plenary talk)', Paper presented at European Photovoltaic Solar Energy Conference 2006, 1/01/06 pp. 10-14.

TY - CONF

T1 - PROGRESS WITH ALL-SILICON TANDEM CELLS BASED ON SILICON QUANTUM DOTS IN A DIELECTRIC MATRIX (plenary talk)

AU - Green, Martin

AU - Conibeer, Gavin

AU - Koenig, Dirk

AU - Cho, Eun-Chel

AU - Song, Dengyuan

AU - Cho, Young-Hyun

AU - Fangsuwannarak, Thipwan

AU - Huang, Yidan

AU - Scardera, Giuseppe

AU - Pink, Edwin

AU - Huang, Shujuan

AU - Jiang, scott

AU - Trupke, Thorsten

AU - Corkish, R.

AU - Puzzer, Tom

PY - 2006/9/8

Y1 - 2006/9/8

N2 - Mature PV technologies are likely to push to ever increasing efficiency due to the cost leverage provided by high efficiency. Although a range of “third generation” techniques has been suggested for improving cell efficiency beyond that of a single cell, the tandem cell approach is the only one so far to give improved experimental performance. The reliability of silicon wafer-based modules is well established. However, there are no obvious candidates for suitable high-bandgap cells to use with silicon that would not, to some extent, compromise this reliability and stability or depend upon toxic or scarce elements. This work seeks to engineer wide-bandgap silicon-based materials by using quantum-confinement in silicon quantum dots dispersed in a matrix of silicon carbide, nitride or oxide. Keywords: Silicon, Quantum Dots, Tandem

AB - Mature PV technologies are likely to push to ever increasing efficiency due to the cost leverage provided by high efficiency. Although a range of “third generation” techniques has been suggested for improving cell efficiency beyond that of a single cell, the tandem cell approach is the only one so far to give improved experimental performance. The reliability of silicon wafer-based modules is well established. However, there are no obvious candidates for suitable high-bandgap cells to use with silicon that would not, to some extent, compromise this reliability and stability or depend upon toxic or scarce elements. This work seeks to engineer wide-bandgap silicon-based materials by using quantum-confinement in silicon quantum dots dispersed in a matrix of silicon carbide, nitride or oxide. Keywords: Silicon, Quantum Dots, Tandem

M3 - Paper

SP - 10

EP - 14

T2 - European Photovoltaic Solar Energy Conference 2006

Y2 - 1 January 2006

ER -

PROGRESS WITH ALL-SILICON TANDEM CELLS BASED ON SILICON QUANTUM DOTS IN A DIELECTRIC MATRIX (plenary talk)

Abstract

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