Progress with All-Silicon Tandem Cells on Glass Using Silicon Quantum Dots in Silicon-Based Dielectric Matrices

Martin Green; Gavin Conibeer; Dirk Koenig; Ivan Perez-Wurfl; Angus Gentle; Shujuan Huang; Dengyuan Song; Xiaojing Hao; Fei Gao; Sangwook Park; Christopher Flynn; Yong So; Bo  Zhang; Dawei Di; Patrick Campbell; Yidan Huang; Tom Puzzer

Progress with All-Silicon Tandem Cells on Glass Using Silicon Quantum Dots in Silicon-Based Dielectric Matrices

Martin Green^*, Gavin Conibeer, Dirk Koenig, Ivan Perez-Wurfl, Angus Gentle, Shujuan Huang, Dengyuan Song, Xiaojing Hao, Fei Gao, Sangwook Park, Christopher Flynn, Yong So, Bo Zhang, Dawei Di, Patrick Campbell, Yidan Huang, Tom Puzzer

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

Photovoltaics is destined to push to ever increasing performance due to the cost leverage provided by high efficiency. Although a range of “third generation” techniques have been suggested for improving cell efficiency beyond that of a single cell, so far the tandem cell approach is the only one to give improved performance in practice. Silicon wafer-based modules have shown high levels of reliability. However, there are no obvious candidates for high-bandgap compound semiconductors to use with silicon in tandem cells that would not compromise this reliability and stability, to some extent, or depend upon toxic or scarce elements. This work seeks to engineer wide-bandgap, Si-compatible materials by using quantum-confinement in silicon quantum dots (QDs) dispersed in a matrix of silicon carbide, nitride or oxide.
Keywords: Silicon, Quantum Dots, Tandem

Original language	English
Pages	15-18
Number of pages	4
Publication status	Published - 25 Sept 2009
Externally published	Yes
Event	24th European Photovoltaic Solar Energy Conference 2009 - Hamburg, Germany Duration: 21 Sept 2009 → 25 Sept 2009 Conference number: 24

Conference

Conference	24th European Photovoltaic Solar Energy Conference 2009
Abbreviated title	EUPVSEC 2009
Country/Territory	Germany
City	Hamburg
Period	21/09/09 → 25/09/09
Other	September 21-24 2009

Cite this

Green, M., Conibeer, G., Koenig, D., Perez-Wurfl, I., Gentle, A., Huang, S., Song, D., Hao, X., Gao, F., Park, S., Flynn, C., So, Y., Zhang, B., Di, D., Campbell, P., Huang, Y., & Puzzer, T. (2009). Progress with All-Silicon Tandem Cells on Glass Using Silicon Quantum Dots in Silicon-Based Dielectric Matrices. 15-18. Paper presented at 24th European Photovoltaic Solar Energy Conference 2009, Hamburg, Germany.

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abstract = "Photovoltaics is destined to push to ever increasing performance due to the cost leverage provided by high efficiency. Although a range of “third generation” techniques have been suggested for improving cell efficiency beyond that of a single cell, so far the tandem cell approach is the only one to give improved performance in practice. Silicon wafer-based modules have shown high levels of reliability. However, there are no obvious candidates for high-bandgap compound semiconductors to use with silicon in tandem cells that would not compromise this reliability and stability, to some extent, or depend upon toxic or scarce elements. This work seeks to engineer wide-bandgap, Si-compatible materials by using quantum-confinement in silicon quantum dots (QDs) dispersed in a matrix of silicon carbide, nitride or oxide. Keywords: Silicon, Quantum Dots, Tandem",

author = "Martin Green and Gavin Conibeer and Dirk Koenig and Ivan Perez-Wurfl and Angus Gentle and Shujuan Huang and Dengyuan Song and Xiaojing Hao and Fei Gao and Sangwook Park and Christopher Flynn and Yong So and Bo Zhang and Dawei Di and Patrick Campbell and Yidan Huang and Tom Puzzer",

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note = "24th European Photovoltaic Solar Energy Conference 2009, EUPVSEC 2009 ; Conference date: 21-09-2009 Through 25-09-2009",

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Green, M, Conibeer, G, Koenig, D, Perez-Wurfl, I, Gentle, A, Huang, S, Song, D, Hao, X, Gao, F, Park, S, Flynn, C, So, Y, Zhang, B, Di, D, Campbell, P, Huang, Y & Puzzer, T 2009, 'Progress with All-Silicon Tandem Cells on Glass Using Silicon Quantum Dots in Silicon-Based Dielectric Matrices', Paper presented at 24th European Photovoltaic Solar Energy Conference 2009, Hamburg, Germany, 21/09/09 - 25/09/09 pp. 15-18.

TY - CONF

T1 - Progress with All-Silicon Tandem Cells on Glass Using Silicon Quantum Dots in Silicon-Based Dielectric Matrices

AU - Green, Martin

AU - Conibeer, Gavin

AU - Koenig, Dirk

AU - Perez-Wurfl, Ivan

AU - Gentle, Angus

AU - Huang, Shujuan

AU - Song, Dengyuan

AU - Hao, Xiaojing

AU - Gao, Fei

AU - Park, Sangwook

AU - Flynn, Christopher

AU - So, Yong

AU - Zhang, Bo

AU - Di, Dawei

AU - Campbell, Patrick

AU - Huang, Yidan

AU - Puzzer, Tom

N1 - Conference code: 24

PY - 2009/9/25

Y1 - 2009/9/25

N2 - Photovoltaics is destined to push to ever increasing performance due to the cost leverage provided by high efficiency. Although a range of “third generation” techniques have been suggested for improving cell efficiency beyond that of a single cell, so far the tandem cell approach is the only one to give improved performance in practice. Silicon wafer-based modules have shown high levels of reliability. However, there are no obvious candidates for high-bandgap compound semiconductors to use with silicon in tandem cells that would not compromise this reliability and stability, to some extent, or depend upon toxic or scarce elements. This work seeks to engineer wide-bandgap, Si-compatible materials by using quantum-confinement in silicon quantum dots (QDs) dispersed in a matrix of silicon carbide, nitride or oxide. Keywords: Silicon, Quantum Dots, Tandem

AB - Photovoltaics is destined to push to ever increasing performance due to the cost leverage provided by high efficiency. Although a range of “third generation” techniques have been suggested for improving cell efficiency beyond that of a single cell, so far the tandem cell approach is the only one to give improved performance in practice. Silicon wafer-based modules have shown high levels of reliability. However, there are no obvious candidates for high-bandgap compound semiconductors to use with silicon in tandem cells that would not compromise this reliability and stability, to some extent, or depend upon toxic or scarce elements. This work seeks to engineer wide-bandgap, Si-compatible materials by using quantum-confinement in silicon quantum dots (QDs) dispersed in a matrix of silicon carbide, nitride or oxide. Keywords: Silicon, Quantum Dots, Tandem

M3 - Paper

SP - 15

EP - 18

T2 - 24th European Photovoltaic Solar Energy Conference 2009

Y2 - 21 September 2009 through 25 September 2009

ER -

Progress with All-Silicon Tandem Cells on Glass Using Silicon Quantum Dots in Silicon-Based Dielectric Matrices

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