PROGRESS WITH SILICON-BASED TANDEM CELLS USING GROUP IV QUANTUM DOTS IN A DIELECTRIC MATRIX (plenary talk)

Martin Green; Gavin Conibeer; Ivan Perez-Wurfl; Shujuan Huang; Dirk Koenig; Dengyuan Song; Angus Gentle; Xiaojing Hao; S. W. Park; Fei Gao; Y. H. So; Yidan Huang

PROGRESS WITH SILICON-BASED TANDEM CELLS USING GROUP IV QUANTUM DOTS IN A DIELECTRIC MATRIX (plenary talk)

Martin Green^*, Gavin Conibeer, Ivan Perez-Wurfl, Shujuan Huang, Dirk Koenig, Dengyuan Song, Angus Gentle, Xiaojing Hao, S. W. Park, Fei Gao, Y. H. So, Yidan Huang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

Abstract

Material costs will continually push photovoltaics to ever increasing efficiency to take advantage of
the cost leverage thereby available. Although a range of “third generation” approaches have been suggested for improving cell efficiency beyond that of a single cell, the tandem cell approach is the only one yet to have demonstrated improved experimental performance. The reliability of silicon wafer-based modules is well established. However, there are no obvious candidates for suitable high-bandgap cells to use with silicon in a tandem device that would not, to some extent, compromise this reliability and stability or depend upon toxic or scarce elements. This work seeks to engineer wide-bandgap silicon-based materials by using quantum-confinement in silicon quantum dots or quantum dots from other Group IV elements dispersed in a matrix of silicon carbide, nitride or oxide.
Keywords: Silicon, Quantum Dots, Tandem

Original language	English
Title of host publication	Proc. of the 23rd European Photovoltaics Science and Engineering Conference (23E-PVSEC)
Subtitle of host publication	Proc. on CD-ROM
Editors	D Lincot, Heinz Ossenbrink, Peter Helm
Pages	1-4
Number of pages	4
ISBN (Electronic)	3–936338–24-8
Publication status	Published - 5 Sept 2008
Externally published	Yes

Cite this

Green, M., Conibeer, G., Perez-Wurfl, I., Huang, S., Koenig, D., Song, D., Gentle, A., Hao, X., Park, S. W., Gao, F., So, Y. H., & Huang, Y. (2008). PROGRESS WITH SILICON-BASED TANDEM CELLS USING GROUP IV QUANTUM DOTS IN A DIELECTRIC MATRIX (plenary talk). In D. Lincot, H. Ossenbrink, & P. Helm (Eds.), Proc. of the 23rd European Photovoltaics Science and Engineering Conference (23E-PVSEC): Proc. on CD-ROM (pp. 1-4). Article 1AP.1.1

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title = "PROGRESS WITH SILICON-BASED TANDEM CELLS USING GROUP IV QUANTUM DOTS IN A DIELECTRIC MATRIX (plenary talk)",

abstract = "Material costs will continually push photovoltaics to ever increasing efficiency to take advantage of the cost leverage thereby available. Although a range of “third generation” approaches have been suggested for improving cell efficiency beyond that of a single cell, the tandem cell approach is the only one yet to have demonstrated improved experimental performance. The reliability of silicon wafer-based modules is well established. However, there are no obvious candidates for suitable high-bandgap cells to use with silicon in a tandem device that would not, to some extent, compromise this reliability and stability or depend upon toxic or scarce elements. This work seeks to engineer wide-bandgap silicon-based materials by using quantum-confinement in silicon quantum dots or quantum dots from other Group IV elements dispersed in a matrix of silicon carbide, nitride or oxide. Keywords: Silicon, Quantum Dots, Tandem",

author = "Martin Green and Gavin Conibeer and Ivan Perez-Wurfl and Shujuan Huang and Dirk Koenig and Dengyuan Song and Angus Gentle and Xiaojing Hao and Park, \{S. W.\} and Fei Gao and So, \{Y. H.\} and Yidan Huang",

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day = "5",

language = "English",

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editor = "D Lincot and Heinz Ossenbrink and Peter Helm",

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Green, M, Conibeer, G, Perez-Wurfl, I, Huang, S, Koenig, D, Song, D, Gentle, A, Hao, X, Park, SW, Gao, F, So, YH & Huang, Y 2008, PROGRESS WITH SILICON-BASED TANDEM CELLS USING GROUP IV QUANTUM DOTS IN A DIELECTRIC MATRIX (plenary talk). in D Lincot, H Ossenbrink & P Helm (eds), Proc. of the 23rd European Photovoltaics Science and Engineering Conference (23E-PVSEC): Proc. on CD-ROM., 1AP.1.1, pp. 1-4.

PROGRESS WITH SILICON-BASED TANDEM CELLS USING GROUP IV QUANTUM DOTS IN A DIELECTRIC MATRIX (plenary talk). / Green, Martin; Conibeer, Gavin; Perez-Wurfl, Ivan et al.
Proc. of the 23rd European Photovoltaics Science and Engineering Conference (23E-PVSEC): Proc. on CD-ROM. ed. / D Lincot; Heinz Ossenbrink; Peter Helm. 2008. p. 1-4 1AP.1.1.

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

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T1 - PROGRESS WITH SILICON-BASED TANDEM CELLS USING GROUP IV QUANTUM DOTS IN A DIELECTRIC MATRIX (plenary talk)

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AU - Conibeer, Gavin

AU - Perez-Wurfl, Ivan

AU - Huang, Shujuan

AU - Koenig, Dirk

AU - Song, Dengyuan

AU - Gentle, Angus

AU - Hao, Xiaojing

AU - Park, S. W.

AU - Gao, Fei

AU - So, Y. H.

AU - Huang, Yidan

PY - 2008/9/5

Y1 - 2008/9/5

N2 - Material costs will continually push photovoltaics to ever increasing efficiency to take advantage of the cost leverage thereby available. Although a range of “third generation” approaches have been suggested for improving cell efficiency beyond that of a single cell, the tandem cell approach is the only one yet to have demonstrated improved experimental performance. The reliability of silicon wafer-based modules is well established. However, there are no obvious candidates for suitable high-bandgap cells to use with silicon in a tandem device that would not, to some extent, compromise this reliability and stability or depend upon toxic or scarce elements. This work seeks to engineer wide-bandgap silicon-based materials by using quantum-confinement in silicon quantum dots or quantum dots from other Group IV elements dispersed in a matrix of silicon carbide, nitride or oxide. Keywords: Silicon, Quantum Dots, Tandem

AB - Material costs will continually push photovoltaics to ever increasing efficiency to take advantage of the cost leverage thereby available. Although a range of “third generation” approaches have been suggested for improving cell efficiency beyond that of a single cell, the tandem cell approach is the only one yet to have demonstrated improved experimental performance. The reliability of silicon wafer-based modules is well established. However, there are no obvious candidates for suitable high-bandgap cells to use with silicon in a tandem device that would not, to some extent, compromise this reliability and stability or depend upon toxic or scarce elements. This work seeks to engineer wide-bandgap silicon-based materials by using quantum-confinement in silicon quantum dots or quantum dots from other Group IV elements dispersed in a matrix of silicon carbide, nitride or oxide. Keywords: Silicon, Quantum Dots, Tandem

M3 - Conference Paper

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BT - Proc. of the 23rd European Photovoltaics Science and Engineering Conference (23E-PVSEC)

A2 - Lincot, D

A2 - Ossenbrink, Heinz

A2 - Helm, Peter

ER -

PROGRESS WITH SILICON-BASED TANDEM CELLS USING GROUP IV QUANTUM DOTS IN A DIELECTRIC MATRIX (plenary talk)

Abstract

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