Properties of In0.5Ga0.5As/GaAs/Al 0.2Ga0.8As quantum-dots-in-a-well infrared photodetectors

G. Jolley; L. Fu; H. H. Tan; C. Jagadish

doi:10.1088/0022-3727/42/9/095101

Properties of In_0.5Ga_0.5As/GaAs/Al _0.2Ga_0.8As quantum-dots-in-a-well infrared photodetectors

G. Jolley^*, L. Fu, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report on an experimental and theoretical study of the optical and dark current properties of In_0.5Ga_0.5As/GaAs/Al _0.2Ga_0.8As quantum-dots-in-a-well infrared photodetectors. In particular, we investigate the spectral tunability of the dot-to-well transitions by quantum well thickness variations. The effects of the quantum well states on the dark current characteristics are also investigated. Modelling of the electron thermal energy distribution suggests the large density of states in the quantum well can lead to a lowering of the dark current activation energy.

Original language	English
Article number	095101
Journal	Journal Physics D: Applied Physics
Volume	42
Issue number	9
DOIs	https://doi.org/10.1088/0022-3727/42/9/095101
Publication status	Published - 7 May 2009

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title = "Properties of In0.5Ga0.5As/GaAs/Al 0.2Ga0.8As quantum-dots-in-a-well infrared photodetectors",

abstract = "We report on an experimental and theoretical study of the optical and dark current properties of In0.5Ga0.5As/GaAs/Al 0.2Ga0.8As quantum-dots-in-a-well infrared photodetectors. In particular, we investigate the spectral tunability of the dot-to-well transitions by quantum well thickness variations. The effects of the quantum well states on the dark current characteristics are also investigated. Modelling of the electron thermal energy distribution suggests the large density of states in the quantum well can lead to a lowering of the dark current activation energy.",

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AU - Jolley, G.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2009/5/7

Y1 - 2009/5/7

N2 - We report on an experimental and theoretical study of the optical and dark current properties of In0.5Ga0.5As/GaAs/Al 0.2Ga0.8As quantum-dots-in-a-well infrared photodetectors. In particular, we investigate the spectral tunability of the dot-to-well transitions by quantum well thickness variations. The effects of the quantum well states on the dark current characteristics are also investigated. Modelling of the electron thermal energy distribution suggests the large density of states in the quantum well can lead to a lowering of the dark current activation energy.

AB - We report on an experimental and theoretical study of the optical and dark current properties of In0.5Ga0.5As/GaAs/Al 0.2Ga0.8As quantum-dots-in-a-well infrared photodetectors. In particular, we investigate the spectral tunability of the dot-to-well transitions by quantum well thickness variations. The effects of the quantum well states on the dark current characteristics are also investigated. Modelling of the electron thermal energy distribution suggests the large density of states in the quantum well can lead to a lowering of the dark current activation energy.

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U2 - 10.1088/0022-3727/42/9/095101

DO - 10.1088/0022-3727/42/9/095101

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VL - 42

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

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M1 - 095101

ER -

Properties of In_0.5Ga_0.5As/GaAs/Al _0.2Ga_0.8As quantum-dots-in-a-well infrared photodetectors

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