@inproceedings{ddcfbabc69884c5791a5eec2b68478b3,
title = "Properties of radiative recombination in GaAsN epilayers",
abstract = "In this short note, we suggest that the radiative recombination in GaAsN epilayers takes place between localized electrons and delocalized holes, based on the risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected localized excitons.",
author = "Sun, {B. Q.} and M. Gal and Q. Gao and Tan, {H. H.} and C. Jagadish",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 ; Conference date: 11-12-2002 Through 13-12-2002",
year = "2002",
doi = "10.1109/COMMAD.2002.1237295",
language = "English",
series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "483--486",
editor = "Michael Gal",
booktitle = "2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings",
address = "United States",
}