Properties of radiative recombination in GaAsN epilayers

B. Q. Sun, M. Gal, Q. Gao, H. H. Tan, C. Jagadish

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    1 Citation (Scopus)

    Abstract

    In this short note, we suggest that the radiative recombination in GaAsN epilayers takes place between localized electrons and delocalized holes, based on the risetime of the photoluminescence signal is more than two orders of magnitude shorter than that expected localized excitons.

    Original languageEnglish
    Title of host publication2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
    EditorsMichael Gal
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages483-486
    Number of pages4
    ISBN (Electronic)0780375718
    DOIs
    Publication statusPublished - 2002
    EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia
    Duration: 11 Dec 200213 Dec 2002

    Publication series

    NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
    Volume2002-January

    Conference

    ConferenceConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
    Country/TerritoryAustralia
    CitySydney
    Period11/12/0213/12/02

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