Proton implantation-induced intermixing effects on AlGaAs/GaAs single QW structures

X. Q. Liu; X. S. Chen; Z. F. Li; W. Lu; S. C. Shen; H. H. Tan; S. Yuan; C. Jagadish

doi:10.1016/S0375-9601(00)00745-3

Proton implantation-induced intermixing effects on AlGaAs/GaAs single QW structures

X. Q. Liu^*, X. S. Chen, Z. F. Li, W. Lu, S. C. Shen, H. H. Tan, S. Yuan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The effects of intermixing of Al_0.54Ga_0.46As/GaAs/Al_0.54Ga_0.46A s QW enhanced by proton implantation and subsequent annealing have been investigated by PL and PR measurements. Comparing with as-grown QW, obvious blueshifts of all the transitions were observed. The H₂₂ transition was found to be more sensitive to the implantation doses than that of H₁₁. The experimental results are consistent with the theoretical results calculated by using the model of error function profile of Al composition. The results are fruitful to understand the potential profile after intermixing enhanced by proton implantation, and also to the application of implantation enhanced intermixing effects on devices.

Original language	English
Pages (from-to)	99-102
Number of pages	4
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	278
Issue number	1-2
DOIs	https://doi.org/10.1016/S0375-9601(00)00745-3
Publication status	Published - 18 Dec 2000

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@article{100ea07fc30f445ea45f70b1e3d1ddfb,

title = "Proton implantation-induced intermixing effects on AlGaAs/GaAs single QW structures",

abstract = "The effects of intermixing of Al0.54Ga0.46As/GaAs/Al0.54Ga0.46A s QW enhanced by proton implantation and subsequent annealing have been investigated by PL and PR measurements. Comparing with as-grown QW, obvious blueshifts of all the transitions were observed. The H22 transition was found to be more sensitive to the implantation doses than that of H11. The experimental results are consistent with the theoretical results calculated by using the model of error function profile of Al composition. The results are fruitful to understand the potential profile after intermixing enhanced by proton implantation, and also to the application of implantation enhanced intermixing effects on devices.",

keywords = "AlGaAs/GaAs quantum well, Intermixing, Photoluminescence, Photoreflectance, Proton implantation",

author = "Liu, {X. Q.} and Chen, {X. S.} and Li, {Z. F.} and W. Lu and Shen, {S. C.} and Tan, {H. H.} and S. Yuan and C. Jagadish",

year = "2000",

month = dec,

day = "18",

doi = "10.1016/S0375-9601(00)00745-3",

language = "English",

volume = "278",

pages = "99--102",

journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",

issn = "0375-9601",

publisher = "Elsevier B.V.",

number = "1-2",

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TY - JOUR

T1 - Proton implantation-induced intermixing effects on AlGaAs/GaAs single QW structures

AU - Liu, X. Q.

AU - Chen, X. S.

AU - Li, Z. F.

AU - Lu, W.

AU - Shen, S. C.

AU - Tan, H. H.

AU - Yuan, S.

AU - Jagadish, C.

PY - 2000/12/18

Y1 - 2000/12/18

N2 - The effects of intermixing of Al0.54Ga0.46As/GaAs/Al0.54Ga0.46A s QW enhanced by proton implantation and subsequent annealing have been investigated by PL and PR measurements. Comparing with as-grown QW, obvious blueshifts of all the transitions were observed. The H22 transition was found to be more sensitive to the implantation doses than that of H11. The experimental results are consistent with the theoretical results calculated by using the model of error function profile of Al composition. The results are fruitful to understand the potential profile after intermixing enhanced by proton implantation, and also to the application of implantation enhanced intermixing effects on devices.

AB - The effects of intermixing of Al0.54Ga0.46As/GaAs/Al0.54Ga0.46A s QW enhanced by proton implantation and subsequent annealing have been investigated by PL and PR measurements. Comparing with as-grown QW, obvious blueshifts of all the transitions were observed. The H22 transition was found to be more sensitive to the implantation doses than that of H11. The experimental results are consistent with the theoretical results calculated by using the model of error function profile of Al composition. The results are fruitful to understand the potential profile after intermixing enhanced by proton implantation, and also to the application of implantation enhanced intermixing effects on devices.

KW - AlGaAs/GaAs quantum well

KW - Intermixing

KW - Photoluminescence

KW - Photoreflectance

KW - Proton implantation

UR - http://www.scopus.com/inward/record.url?scp=0034684680&partnerID=8YFLogxK

U2 - 10.1016/S0375-9601(00)00745-3

DO - 10.1016/S0375-9601(00)00745-3

M3 - Article

SN - 0375-9601

VL - 278

SP - 99

EP - 102

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

IS - 1-2

ER -

Proton implantation-induced intermixing effects on AlGaAs/GaAs single QW structures

Abstract

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