Proton implantation-induced intermixing of InAsInP quantum dots

S. Barik*, H. H. Tan, C. Jagadish

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    15 Citations (Scopus)

    Abstract

    Proton implantation-induced intermixing of InAs quantum dots (QDs) capped with InP, GaInAsP, and InP and InGaAs layers grown by metal-organic chemical vapor deposition is investigated. The samples are annealed at 750, 800, 850, and 900 °C for 30 s and thermal stability of the QDs is studied. The optimum annealing temperature is around 800 °C which gives maximum implantation-induced energy shift. The QDs capped with InP layers show the highest implantation-induced energy shift due to strong group V interdiffusion whereas the QDs grown on and capped with GaInAsP layers show the least implantation-induced energy shift due to weak group V and group III interdiffusion. The QDs capped with InP and InGaAs layers show intermediate implantation-induced energy shift and are less thermally stable compared to the QDs grown on and capped with GaInAsP layers. The QDs capped with InP layers show enhanced photoluminescence (PL) intensity when implanted with lower proton dose (less than 5× 1014 ions cm2). On the other hand higher proton dose (more than 1× 1014 ions cm2) reduces the PL linewidth in all samples.

    Original languageEnglish
    Article number223101
    JournalApplied Physics Letters
    Volume88
    Issue number22
    DOIs
    Publication statusPublished - 29 May 2006

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