Proton implantation-induced intermixing of InAsInP quantum dots

S. Barik; H. H. Tan; C. Jagadish

doi:10.1063/1.2208371

Proton implantation-induced intermixing of InAsInP quantum dots

S. Barik^*, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Proton implantation-induced intermixing of InAs quantum dots (QDs) capped with InP, GaInAsP, and InP and InGaAs layers grown by metal-organic chemical vapor deposition is investigated. The samples are annealed at 750, 800, 850, and 900 °C for 30 s and thermal stability of the QDs is studied. The optimum annealing temperature is around 800 °C which gives maximum implantation-induced energy shift. The QDs capped with InP layers show the highest implantation-induced energy shift due to strong group V interdiffusion whereas the QDs grown on and capped with GaInAsP layers show the least implantation-induced energy shift due to weak group V and group III interdiffusion. The QDs capped with InP and InGaAs layers show intermediate implantation-induced energy shift and are less thermally stable compared to the QDs grown on and capped with GaInAsP layers. The QDs capped with InP layers show enhanced photoluminescence (PL) intensity when implanted with lower proton dose (less than 5× 1014 ions cm2). On the other hand higher proton dose (more than 1× 1014 ions cm2) reduces the PL linewidth in all samples.

Original language	English
Article number	223101
Journal	Applied Physics Letters
Volume	88
Issue number	22
DOIs	https://doi.org/10.1063/1.2208371
Publication status	Published - 29 May 2006

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title = "Proton implantation-induced intermixing of InAsInP quantum dots",

abstract = "Proton implantation-induced intermixing of InAs quantum dots (QDs) capped with InP, GaInAsP, and InP and InGaAs layers grown by metal-organic chemical vapor deposition is investigated. The samples are annealed at 750, 800, 850, and 900 °C for 30 s and thermal stability of the QDs is studied. The optimum annealing temperature is around 800 °C which gives maximum implantation-induced energy shift. The QDs capped with InP layers show the highest implantation-induced energy shift due to strong group V interdiffusion whereas the QDs grown on and capped with GaInAsP layers show the least implantation-induced energy shift due to weak group V and group III interdiffusion. The QDs capped with InP and InGaAs layers show intermediate implantation-induced energy shift and are less thermally stable compared to the QDs grown on and capped with GaInAsP layers. The QDs capped with InP layers show enhanced photoluminescence (PL) intensity when implanted with lower proton dose (less than 5× 1014 ions cm2). On the other hand higher proton dose (more than 1× 1014 ions cm2) reduces the PL linewidth in all samples.",

author = "S. Barik and Tan, {H. H.} and C. Jagadish",

year = "2006",

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day = "29",

doi = "10.1063/1.2208371",

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volume = "88",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Proton implantation-induced intermixing of InAsInP quantum dots

AU - Barik, S.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2006/5/29

Y1 - 2006/5/29

N2 - Proton implantation-induced intermixing of InAs quantum dots (QDs) capped with InP, GaInAsP, and InP and InGaAs layers grown by metal-organic chemical vapor deposition is investigated. The samples are annealed at 750, 800, 850, and 900 °C for 30 s and thermal stability of the QDs is studied. The optimum annealing temperature is around 800 °C which gives maximum implantation-induced energy shift. The QDs capped with InP layers show the highest implantation-induced energy shift due to strong group V interdiffusion whereas the QDs grown on and capped with GaInAsP layers show the least implantation-induced energy shift due to weak group V and group III interdiffusion. The QDs capped with InP and InGaAs layers show intermediate implantation-induced energy shift and are less thermally stable compared to the QDs grown on and capped with GaInAsP layers. The QDs capped with InP layers show enhanced photoluminescence (PL) intensity when implanted with lower proton dose (less than 5× 1014 ions cm2). On the other hand higher proton dose (more than 1× 1014 ions cm2) reduces the PL linewidth in all samples.

AB - Proton implantation-induced intermixing of InAs quantum dots (QDs) capped with InP, GaInAsP, and InP and InGaAs layers grown by metal-organic chemical vapor deposition is investigated. The samples are annealed at 750, 800, 850, and 900 °C for 30 s and thermal stability of the QDs is studied. The optimum annealing temperature is around 800 °C which gives maximum implantation-induced energy shift. The QDs capped with InP layers show the highest implantation-induced energy shift due to strong group V interdiffusion whereas the QDs grown on and capped with GaInAsP layers show the least implantation-induced energy shift due to weak group V and group III interdiffusion. The QDs capped with InP and InGaAs layers show intermediate implantation-induced energy shift and are less thermally stable compared to the QDs grown on and capped with GaInAsP layers. The QDs capped with InP layers show enhanced photoluminescence (PL) intensity when implanted with lower proton dose (less than 5× 1014 ions cm2). On the other hand higher proton dose (more than 1× 1014 ions cm2) reduces the PL linewidth in all samples.

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U2 - 10.1063/1.2208371

DO - 10.1063/1.2208371

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SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223101

ER -

Proton implantation-induced intermixing of InAsInP quantum dots

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