Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers

L. Fu; H. H. Tan; M. B. Johnston; M. Gal; C. Jagadish

doi:10.1063/1.370291

Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers

L. Fu^*, H. H. Tan, M. B. Johnston, M. Gal, C. Jagadish

^*Corresponding author for this work

Department of Electronic Materials Engineering

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

The intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells by proton irradiation with subsequent rapid thermal annealing (RTA) was studied. In each case, the energy shift increased with the increase of the irradiation doses. In comparison, larger energy shifts and better photoluminescence (PL) intensities recovery were observed in the InGaAs/AlGaAs material. A wavelength shift of 49.3 nm was obtained from the proton irradiated and annealed InGaAs/AlGaAs GRINSCH laser, showing that ion irradiation induced intermixing is a very promising technique in integrating lasers of different wavelengths.

Original language	English
Pages (from-to)	6786-6789
Number of pages	4
Journal	Journal of Applied Physics
Volume	85
Issue number	9
DOIs	https://doi.org/10.1063/1.370291
Publication status	Published - 1 May 1999

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title = "Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers",

abstract = "The intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells by proton irradiation with subsequent rapid thermal annealing (RTA) was studied. In each case, the energy shift increased with the increase of the irradiation doses. In comparison, larger energy shifts and better photoluminescence (PL) intensities recovery were observed in the InGaAs/AlGaAs material. A wavelength shift of 49.3 nm was obtained from the proton irradiated and annealed InGaAs/AlGaAs GRINSCH laser, showing that ion irradiation induced intermixing is a very promising technique in integrating lasers of different wavelengths.",

author = "L. Fu and Tan, {H. H.} and Johnston, {M. B.} and M. Gal and C. Jagadish",

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T1 - Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers

AU - Fu, L.

AU - Tan, H. H.

AU - Johnston, M. B.

AU - Gal, M.

AU - Jagadish, C.

PY - 1999/5/1

Y1 - 1999/5/1

N2 - The intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells by proton irradiation with subsequent rapid thermal annealing (RTA) was studied. In each case, the energy shift increased with the increase of the irradiation doses. In comparison, larger energy shifts and better photoluminescence (PL) intensities recovery were observed in the InGaAs/AlGaAs material. A wavelength shift of 49.3 nm was obtained from the proton irradiated and annealed InGaAs/AlGaAs GRINSCH laser, showing that ion irradiation induced intermixing is a very promising technique in integrating lasers of different wavelengths.

AB - The intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells by proton irradiation with subsequent rapid thermal annealing (RTA) was studied. In each case, the energy shift increased with the increase of the irradiation doses. In comparison, larger energy shifts and better photoluminescence (PL) intensities recovery were observed in the InGaAs/AlGaAs material. A wavelength shift of 49.3 nm was obtained from the proton irradiated and annealed InGaAs/AlGaAs GRINSCH laser, showing that ion irradiation induced intermixing is a very promising technique in integrating lasers of different wavelengths.

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U2 - 10.1063/1.370291

DO - 10.1063/1.370291

M3 - Article

SN - 0021-8979

VL - 85

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EP - 6789

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers

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