Proton irradiation induced intermixing in InxGa 1-xAs/InP quantum wells

P. L. Gareso, H. H. Tan, J. Wong-Leung, C. Jagadish, L. V. Dao

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    We have investigated the quantum well interdiffusion of In xGa1-xAs/InP QWs with different In composition using proton irradiation. 50 KeV proton implantation with various doses from 5×1014 H/cm2 to 1×1016 H/cm 2 with subsequent annealing at 750° for 60 sec were used to induce the atomic intermixing process. Photoluminescence was performed to measure the bandgap energy shift between the unimplanted and implanted region of the structures. Initially, the energy shift increased with increasing dose, but then saturated at the highest doses. The energy shift was also found to decrease with increased implantation temperature. Time resolved photoluminescence was performed to investigate the carrier dynamic of the quantum wells after intermixing.

    Original languageEnglish
    Title of host publicationCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings
    Pages93-96
    Number of pages4
    DOIs
    Publication statusPublished - 2005
    EventCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia
    Duration: 8 Dec 200410 Dec 2004

    Publication series

    NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

    Conference

    ConferenceCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
    Country/TerritoryAustralia
    CityBribane, QLD
    Period8/12/0410/12/04

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