Proton irradiation-induced intermixing in InxGa 1-xAs/InP quantum wells - The effect of in composition

P. L. Gareso; M. Buda; L. Fu; H. H. Tan; C. Jagadish; L. V. Dao; X. Wen; P. Hannaford

doi:10.1088/0268-1242/21/10/013

Proton irradiation-induced intermixing in In_xGa _1-xAs/InP quantum wells - The effect of in composition

P. L. Gareso^*, M. Buda, L. Fu, H. H. Tan, C. Jagadish, L. V. Dao, X. Wen, P. Hannaford

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We have investigated atomic intermixing in In_xGa _1-xAs/InP quantum well (QW) structures induced by proton irradiation using photoluminescence (PL) and time-resolved photoluminescence. Photoluminescence results revealed that energy shift was systematically decreased as irradiation temperature was increased, followed by a broadening of the PL linewidth and reduction of the PL intensity. Time-resolved photoluminescence results at room temperature showed that the capture time of carriers in the quantum well region which reflects in the rise time of PL intensity is different for various quantum well structures with different strain and the carrier collection efficiency enhanced in the intermixed QWs. The time evolution of PL intensity also indicates that intermixing changes the strain profile of three QWs.

Original language	English
Article number	013
Pages (from-to)	1441-1446
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	21
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/21/10/013
Publication status	Published - 10 Oct 2006

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title = "Proton irradiation-induced intermixing in InxGa 1-xAs/InP quantum wells - The effect of in composition",

abstract = "We have investigated atomic intermixing in InxGa 1-xAs/InP quantum well (QW) structures induced by proton irradiation using photoluminescence (PL) and time-resolved photoluminescence. Photoluminescence results revealed that energy shift was systematically decreased as irradiation temperature was increased, followed by a broadening of the PL linewidth and reduction of the PL intensity. Time-resolved photoluminescence results at room temperature showed that the capture time of carriers in the quantum well region which reflects in the rise time of PL intensity is different for various quantum well structures with different strain and the carrier collection efficiency enhanced in the intermixed QWs. The time evolution of PL intensity also indicates that intermixing changes the strain profile of three QWs.",

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T1 - Proton irradiation-induced intermixing in InxGa 1-xAs/InP quantum wells - The effect of in composition

AU - Gareso, P. L.

AU - Buda, M.

AU - Fu, L.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Dao, L. V.

AU - Wen, X.

AU - Hannaford, P.

PY - 2006/10/10

Y1 - 2006/10/10

N2 - We have investigated atomic intermixing in InxGa 1-xAs/InP quantum well (QW) structures induced by proton irradiation using photoluminescence (PL) and time-resolved photoluminescence. Photoluminescence results revealed that energy shift was systematically decreased as irradiation temperature was increased, followed by a broadening of the PL linewidth and reduction of the PL intensity. Time-resolved photoluminescence results at room temperature showed that the capture time of carriers in the quantum well region which reflects in the rise time of PL intensity is different for various quantum well structures with different strain and the carrier collection efficiency enhanced in the intermixed QWs. The time evolution of PL intensity also indicates that intermixing changes the strain profile of three QWs.

AB - We have investigated atomic intermixing in InxGa 1-xAs/InP quantum well (QW) structures induced by proton irradiation using photoluminescence (PL) and time-resolved photoluminescence. Photoluminescence results revealed that energy shift was systematically decreased as irradiation temperature was increased, followed by a broadening of the PL linewidth and reduction of the PL intensity. Time-resolved photoluminescence results at room temperature showed that the capture time of carriers in the quantum well region which reflects in the rise time of PL intensity is different for various quantum well structures with different strain and the carrier collection efficiency enhanced in the intermixed QWs. The time evolution of PL intensity also indicates that intermixing changes the strain profile of three QWs.

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U2 - 10.1088/0268-1242/21/10/013

DO - 10.1088/0268-1242/21/10/013

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VL - 21

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JF - Semiconductor Science and Technology

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ER -

Proton irradiation-induced intermixing in In_xGa _1-xAs/InP quantum wells - The effect of in composition

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