Proton-irradiation-induced intermixing of InGaAs quantum dots

P. Lever; H. H. Tan; C. Jagadish; P. Reece; M. Gal

doi:10.1063/1.1561153

Proton-irradiation-induced intermixing of InGaAs quantum dots

P. Lever^*, H. H. Tan, C. Jagadish, P. Reece, M. Gal

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

The interdiffusion processes in InGaAs quantum dots caused by proton irradiation and annealing were studied. Proton irradiation was used on a single layer of InGaAs quantum dots, grown by metalorganic chemical vapor deposition. Photoluminescence (PL) energy shifts were found to increase with proton dose for the doses studied. Implantation at elevated temperatures reduced the amount of PL energy shift, but enhanced recovery of the luminescence was observed.

Original language	English
Pages (from-to)	2053-2055
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	13
DOIs	https://doi.org/10.1063/1.1561153
Publication status	Published - 31 Mar 2003

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title = "Proton-irradiation-induced intermixing of InGaAs quantum dots",

abstract = "The interdiffusion processes in InGaAs quantum dots caused by proton irradiation and annealing were studied. Proton irradiation was used on a single layer of InGaAs quantum dots, grown by metalorganic chemical vapor deposition. Photoluminescence (PL) energy shifts were found to increase with proton dose for the doses studied. Implantation at elevated temperatures reduced the amount of PL energy shift, but enhanced recovery of the luminescence was observed.",

author = "P. Lever and Tan, {H. H.} and C. Jagadish and P. Reece and M. Gal",

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AU - Tan, H. H.

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AU - Reece, P.

AU - Gal, M.

PY - 2003/3/31

Y1 - 2003/3/31

N2 - The interdiffusion processes in InGaAs quantum dots caused by proton irradiation and annealing were studied. Proton irradiation was used on a single layer of InGaAs quantum dots, grown by metalorganic chemical vapor deposition. Photoluminescence (PL) energy shifts were found to increase with proton dose for the doses studied. Implantation at elevated temperatures reduced the amount of PL energy shift, but enhanced recovery of the luminescence was observed.

AB - The interdiffusion processes in InGaAs quantum dots caused by proton irradiation and annealing were studied. Proton irradiation was used on a single layer of InGaAs quantum dots, grown by metalorganic chemical vapor deposition. Photoluminescence (PL) energy shifts were found to increase with proton dose for the doses studied. Implantation at elevated temperatures reduced the amount of PL energy shift, but enhanced recovery of the luminescence was observed.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Proton-irradiation-induced intermixing of InGaAs quantum dots

Abstract

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