TY - JOUR
T1 - Proton irradiation of n-type GaAs
AU - Goodman, S. A.
AU - Auret, F. D.
AU - Ridgway, M.
AU - Myburg, G.
PY - 1999
Y1 - 1999
N2 - In this paper, we report on the defects introduced during 40 keV, 95 keV, 400 keV and 1 MeV proton irradiation of Si-doped epitaxial GaAs. These protons introduce defects Ep1 (E1), Ep2 (E2), Ep4 (E3), Ep5, Ep6 and a metastable defect Ep3. Defect Ep6 has a large capture cross-section (>10-13 cm-2) suggesting that it may be a physically large defect or a defect cluster.
AB - In this paper, we report on the defects introduced during 40 keV, 95 keV, 400 keV and 1 MeV proton irradiation of Si-doped epitaxial GaAs. These protons introduce defects Ep1 (E1), Ep2 (E2), Ep4 (E3), Ep5, Ep6 and a metastable defect Ep3. Defect Ep6 has a large capture cross-section (>10-13 cm-2) suggesting that it may be a physically large defect or a defect cluster.
KW - Deep level transient spectroscopy
KW - Defects
KW - GaAs
KW - Proton irradiation
UR - http://www.scopus.com/inward/record.url?scp=0033513838&partnerID=8YFLogxK
U2 - 10.1016/S0168-583X(98)00755-1
DO - 10.1016/S0168-583X(98)00755-1
M3 - Article
SN - 0168-583X
VL - 148
SP - 446
EP - 449
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
IS - 1-4
ER -