Proton irradiation of n-type GaAs

S. A. Goodman, F. D. Auret, M. Ridgway, G. Myburg*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)

    Abstract

    In this paper, we report on the defects introduced during 40 keV, 95 keV, 400 keV and 1 MeV proton irradiation of Si-doped epitaxial GaAs. These protons introduce defects Ep1 (E1), Ep2 (E2), Ep4 (E3), Ep5, Ep6 and a metastable defect Ep3. Defect Ep6 has a large capture cross-section (>10-13 cm-2) suggesting that it may be a physically large defect or a defect cluster.

    Original languageEnglish
    Pages (from-to)446-449
    Number of pages4
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Volume148
    Issue number1-4
    DOIs
    Publication statusPublished - 1999

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