Proton irradiation of n-type GaAs

S. A. Goodman; F. D. Auret; M. Ridgway; G. Myburg

doi:10.1016/S0168-583X(98)00755-1

Proton irradiation of n-type GaAs

S. A. Goodman, F. D. Auret, M. Ridgway, G. Myburg^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this paper, we report on the defects introduced during 40 keV, 95 keV, 400 keV and 1 MeV proton irradiation of Si-doped epitaxial GaAs. These protons introduce defects Ep1 (E1), Ep2 (E2), Ep4 (E3), Ep5, Ep6 and a metastable defect Ep3. Defect Ep6 has a large capture cross-section (>10^-13 cm^-2) suggesting that it may be a physically large defect or a defect cluster.

Original language	English
Pages (from-to)	446-449
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	148
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(98)00755-1
Publication status	Published - 1999

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title = "Proton irradiation of n-type GaAs",

abstract = "In this paper, we report on the defects introduced during 40 keV, 95 keV, 400 keV and 1 MeV proton irradiation of Si-doped epitaxial GaAs. These protons introduce defects Ep1 (E1), Ep2 (E2), Ep4 (E3), Ep5, Ep6 and a metastable defect Ep3. Defect Ep6 has a large capture cross-section (>10-13 cm-2) suggesting that it may be a physically large defect or a defect cluster.",

keywords = "Deep level transient spectroscopy, Defects, GaAs, Proton irradiation",

author = "Goodman, \{S. A.\} and Auret, \{F. D.\} and M. Ridgway and G. Myburg",

year = "1999",

doi = "10.1016/S0168-583X(98)00755-1",

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volume = "148",

pages = "446--449",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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TY - JOUR

T1 - Proton irradiation of n-type GaAs

AU - Goodman, S. A.

AU - Auret, F. D.

AU - Ridgway, M.

AU - Myburg, G.

PY - 1999

Y1 - 1999

N2 - In this paper, we report on the defects introduced during 40 keV, 95 keV, 400 keV and 1 MeV proton irradiation of Si-doped epitaxial GaAs. These protons introduce defects Ep1 (E1), Ep2 (E2), Ep4 (E3), Ep5, Ep6 and a metastable defect Ep3. Defect Ep6 has a large capture cross-section (>10-13 cm-2) suggesting that it may be a physically large defect or a defect cluster.

AB - In this paper, we report on the defects introduced during 40 keV, 95 keV, 400 keV and 1 MeV proton irradiation of Si-doped epitaxial GaAs. These protons introduce defects Ep1 (E1), Ep2 (E2), Ep4 (E3), Ep5, Ep6 and a metastable defect Ep3. Defect Ep6 has a large capture cross-section (>10-13 cm-2) suggesting that it may be a physically large defect or a defect cluster.

KW - Deep level transient spectroscopy

KW - Defects

KW - GaAs

KW - Proton irradiation

UR - https://www.scopus.com/pages/publications/0033513838

U2 - 10.1016/S0168-583X(98)00755-1

DO - 10.1016/S0168-583X(98)00755-1

M3 - Article

SN - 0168-583X

VL - 148

SP - 446

EP - 449

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Proton irradiation of n-type GaAs

Abstract

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